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Showing items 121-130 of 145 (15 Page(s) Totally)
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| 國立成功大學 |
2009 |
Al0.25Ga0.75N/GaN Schottky Barrier Photodetectors with an Al0.3Ga0.7N Intermediate Layer
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Lee, K. H.; Chang, Ping-Chuan; Chang, Shoou-Jinn; Su, Yan-Kuin; Wang, Y. C.; Yu, C. L.; Wu, S. L. |
| 國立成功大學 |
2009 |
GaN MSM Photodetectors with a Semi-Insulating AlInN Cap Layer and Sputtered ITO Transparent Electrodes
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Weng, W. Y.; Chuang, Ricky W.; Chang, Shoou-Jinn; Lai, W. C.; Hsueh, T. J.; Shei, Shih-Chang; Zeng, X. F.; Wu, S. L. |
| 國立成功大學 |
2009 |
AlInGaN Metal-Insulator-Semiconductor Photodetectors at UV-C 280 nm
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Lee, H. C.; Su, Yan-Kuin; Lin, J. C.; Cheng, Y. C.; Wu, S. L.; Jhou, Y. D. |
| 國立成功大學 |
2008-09 |
GaN-Based Schottky Barrier Photodetectors With a 12-Pair MgxNy-GaN Buffer Layer
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Chang, Shoou-Jinn; Lee, K. H.; Chang, Ping-Chuan; Wang, Y. C.; Yu, C. L.; Kuo, C. H.; Wu, S. L. |
| 國立成功大學 |
2008-09 |
GaN Metal-Semiconductor-Metal Photodetectors With SiN/GaN Nucleation Layer
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Su, Yan-Kuin; Chang, Shoou-Jinn; Jhou, Y. D.; Wu, S. L.; Liu, C. H. |
| 國立成功大學 |
2008 |
GaN MSM photodetectors with an unactivated Mg-doped GaN cap layer and sputtered ITO electrodes
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Lee, K. H.; Chang, Ping-Chuan; Chang, Shoou-Jinn; Yu, C. L.; Wang, Y. C.; Wu, S. L. |
| 國立成功大學 |
2008 |
Characteristics of strained-Si nMOSFET using nickel silicide source/drain
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Kuo, C. W.; Wu, S. L.; Chang, Shoou-Jinn; Lin, H. Y.; Wang, Y. P. |
| 國立成功大學 |
2008 |
Visible-blind metal-semiconductor-metal photodetectors by capping an in situ low-temperature AlN layer
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Lee, K. H.; Chang, Ping-Chuan; Chang, Shoou-Jinn; Yu, C. L.; Wang, Y. C.; Wu, S. L. |
| 國立成功大學 |
2007-11 |
High-detectivity nitride-based MSM photodetectors on InGaN-GaN multiquantum well with the unactivated mg-doped GaN layer
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Chang, Ping-Chuan; Yu, Chia-Lin; Chang, Shoou-Jinn; Lee, K. H.; Liu, C. H.; Wu, S. L. |
| 淡江大學 |
2007-10 |
Antiferroelectric liquid crystals with amide linking group positioned at chiral tail
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Wu, S. L.;Yang, Z. L.; 余良杰; Yu, Liang-jye |
Showing items 121-130 of 145 (15 Page(s) Totally)
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