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机构	日期	题名	作者
國立臺灣科技大學	2011	Cross-layer and cognitive QoS management system for next-generation networking	Chen, J.L.;Liu, S.W.;Wu, S.L.;Chen, M.C.
國立成功大學	2011	GaN MSM UV Photodetectors with an Al(0.82)In(0.18)N Intermediate Layer	Huang, Z. D.; Weng, W. Y.; Chang, S. J.; Chiu, C. J.; Hsueh, T. J.; Lai, W. C.; Wu, S. L.
國立成功大學	2011	InGaN metal-semiconductor-metal photodetectors with triethylgallium precursor and unactivated Mg-doped GaN cap layers	Lee, K.-H.;Chang, P.-C.;Chang, S.-J.;Wu, S.-L.
國立成功大學	2011	GaN MSM UV photodetectors with an Al0.82In0.18N intermediate layer	Huang, Z.-D.;Weng, W.-Y.;Chang, S.-J.;Chiu, C.-J.;Hsueh, T.-J.;Lai, W.-C.;Wu, S. L.
淡江大學	2010-12	Anomalous Zn- and Ni-substitution effects on superconductivity in the superconducting weak ferromagnets RuSr2RCu2O8 (R = Gd, Eu)	Ling, D.C.; Wu, S.L.; Lin, M.H.; Chien, F.Z.
淡江大學	2010-05	High coercivity magnetic multi-wall carbon nanotubes for low-dimensional high-density magnetic recording media	Ray, S.C.; Bhattacharyya, S.; Wu, S.L.; Ling, D.C.; Pong, W.F.; Giorcelli, M; Bianco, S.; Tagliaferro, A.
國立臺灣科技大學	2010	Adaptive cross-layer QoS mechanism for cognitive network applications	Liu S.-W.; Wu S.-L.; Chen J.-L.
國立臺灣科技大學	2010	GaN schottky barrier photodetectors prepared on patterned sapphire substrate	Chang S.J.; Wang S.M.; Chen T.P.; Young S.J.; Lin Y.C.; Wu S.L.; Huang B.R.
國立成功大學	2009-05	Characterization of AlGaN/GaN Metal-Semiconductor-Metal Photodetectors With a Low-Temperature AlGaN Interlayer	Lee, K. H.; Chang, Ping-Chuan; Chang, Shoou-Jinn; Wang, Y. C.; Yu, C. L.; Wu, S. L.
國立成功大學	2009-04-15	GaN MSM Photodetectors With a Semi-Insulating Mg-Doped AlInN Cap Layer	Weng, W. Y.; Chang, Shoou-Jinn; Lai, W. C.; Hsueh, T. J.; Shei, Shih-Chang; Zeng, X. F.; Wu, S. L.; Hung, S. C.
國立成功大學	2009-01	AlGaN/GaN Schottky Barrier Photodetector With Multi-MgxNy/GaN Buffer	Chang, Shoou-Jinn; Lee, K. H.; Chang, Ping-Chuan; Wang, Y. C.; Kuo, C. H.; Wu, S. L.
實踐大學	2009	Investigation of interface characteristics in strained-Si nMOSFETs	Kuo, C.W.;Wu, S.L.;Chang, S.J.;Lin, H.Y.;Wang, Y.P.;Hung, S.C.
實踐大學	2009	DC and 1/f noise characteristics of strained-Si nMOSFETs using chemical-mechanical-polishing technique	Lin, H.Y.;Wu, S.L.;Chang, S.J.;Kuo, C.W.;Wang, Y.P.;Hung, S.C.
實踐大學	2009	GaN MSM Photodetectors With a Semi-Insulating Mg-Doped AlInN Cap Layer	Weng, W.Y.;Chang, S.J.;Lai, W.C.;Hsueh, T.J.;Shei, S.C.;Zeng, X.F.;Wu, S.L.;Hung, S.C.
國立臺灣科技大學	2009	Electronic ballast with digital dimming control for multiple T5 fluorescent lamps	Chen L.-R.; Wu S.-L.; Chu N.-Y.; Hsiao Y.-C.; Chen T.-R.
國立成功大學	2009	Al0.25Ga0.75N/GaN Schottky Barrier Photodetectors with an Al0.3Ga0.7N Intermediate Layer	Lee, K. H.; Chang, Ping-Chuan; Chang, Shoou-Jinn; Su, Yan-Kuin; Wang, Y. C.; Yu, C. L.; Wu, S. L.
國立成功大學	2009	GaN MSM Photodetectors with a Semi-Insulating AlInN Cap Layer and Sputtered ITO Transparent Electrodes	Weng, W. Y.; Chuang, Ricky W.; Chang, Shoou-Jinn; Lai, W. C.; Hsueh, T. J.; Shei, Shih-Chang; Zeng, X. F.; Wu, S. L.
國立成功大學	2009	AlInGaN Metal-Insulator-Semiconductor Photodetectors at UV-C 280 nm	Lee, H. C.; Su, Yan-Kuin; Lin, J. C.; Cheng, Y. C.; Wu, S. L.; Jhou, Y. D.
國立成功大學	2008-09	GaN-Based Schottky Barrier Photodetectors With a 12-Pair MgxNy-GaN Buffer Layer	Chang, Shoou-Jinn; Lee, K. H.; Chang, Ping-Chuan; Wang, Y. C.; Yu, C. L.; Kuo, C. H.; Wu, S. L.
國立成功大學	2008-09	GaN Metal-Semiconductor-Metal Photodetectors With SiN/GaN Nucleation Layer	Su, Yan-Kuin; Chang, Shoou-Jinn; Jhou, Y. D.; Wu, S. L.; Liu, C. H.
國立成功大學	2008	GaN MSM photodetectors with an unactivated Mg-doped GaN cap layer and sputtered ITO electrodes	Lee, K. H.; Chang, Ping-Chuan; Chang, Shoou-Jinn; Yu, C. L.; Wang, Y. C.; Wu, S. L.
國立成功大學	2008	Characteristics of strained-Si nMOSFET using nickel silicide source/drain	Kuo, C. W.; Wu, S. L.; Chang, Shoou-Jinn; Lin, H. Y.; Wang, Y. P.
國立成功大學	2008	Visible-blind metal-semiconductor-metal photodetectors by capping an in situ low-temperature AlN layer	Lee, K. H.; Chang, Ping-Chuan; Chang, Shoou-Jinn; Yu, C. L.; Wang, Y. C.; Wu, S. L.
國立成功大學	2007-11	High-detectivity nitride-based MSM photodetectors on InGaN-GaN multiquantum well with the unactivated mg-doped GaN layer	Chang, Ping-Chuan; Yu, Chia-Lin; Chang, Shoou-Jinn; Lee, K. H.; Liu, C. H.; Wu, S. L.
淡江大學	2007-10	Antiferroelectric liquid crystals with amide linking group positioned at chiral tail	Wu, S. L.;Yang, Z. L.; 余良杰; Yu, Liang-jye

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