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Showing items 101-110 of 145 (15 Page(s) Totally)
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| 國立臺灣科技大學 |
2012 |
Low-frequency noise characteristics of GaN Schottky barrier photodetectors prepared with nickel annealing
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Chen, T.-P.;Young, S.-J.;Chang, S.-J.;Huang, B.-R.;Wang, S.-M.;Hsiao, C.-H.;Wu, S.-L.;Yang, C.-B. |
| 淡江大學 |
2011-12 |
Electronic structure, electron field emission and magnetic behaviors of carbon nanotube fabricated on La0.66Sr0.33MnO3 (LSMO) base layer
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Ray, S.C.; Wu, S.L.; Tsai, M.H.; Okpalugo, T.I.T.; Ling, D.C.;Pong, W.F. |
| 國立成功大學 |
2011-11 |
GaN Schottky barrier photodetectors with a lattice matched Al0.82In0.18N intermediate layer
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Huang, Z.-D.;Weng, W.-Y.;Chang, S.-J.;Jung, S.-C.;Chiu, C.-J.;Hsueh, T.-J.;Lai, W.-C.;Wu, S.-L. |
| 實踐大學 |
2011 |
GaN Schottky Barrier Photodetectors With a Lattice-Matched Al0.82In0.18N Intermediate Layer
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Huang, Z.D.;Weng, W.Y.;Chang, S.J.;Hung, S.C.;Chiu, C.J.;Hsueh, T.J.;Lai, W.C.;Wu, S.L. |
| 實踐大學 |
2011 |
GaN Schottky barrier photodetectors with a lattice-matched Al 0.82In0.18 intermediate layer
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Huang, Z.D.;Weng, W.Y.;Chang, S.J.;Hung, S.C.;Chiu, C.J.;Hsueh, T.J.;Lai, W.C.;Wu, S.L. |
| 國立臺灣科技大學 |
2011 |
Cross-layer and cognitive QoS management system for next-generation networking
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Chen, J.L.;Liu, S.W.;Wu, S.L.;Chen, M.C. |
| 國立成功大學 |
2011 |
GaN MSM UV Photodetectors with an Al(0.82)In(0.18)N Intermediate Layer
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Huang, Z. D.; Weng, W. Y.; Chang, S. J.; Chiu, C. J.; Hsueh, T. J.; Lai, W. C.; Wu, S. L. |
| 國立成功大學 |
2011 |
InGaN metal-semiconductor-metal photodetectors with triethylgallium precursor and unactivated Mg-doped GaN cap layers
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Lee, K.-H.;Chang, P.-C.;Chang, S.-J.;Wu, S.-L. |
| 國立成功大學 |
2011 |
GaN MSM UV photodetectors with an Al0.82In0.18N intermediate layer
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Huang, Z.-D.;Weng, W.-Y.;Chang, S.-J.;Chiu, C.-J.;Hsueh, T.-J.;Lai, W.-C.;Wu, S. L. |
| 淡江大學 |
2010-12 |
Anomalous Zn- and Ni-substitution effects on superconductivity in the superconducting weak ferromagnets RuSr2RCu2O8 (R = Gd, Eu)
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Ling, D.C.; Wu, S.L.; Lin, M.H.; Chien, F.Z. |
Showing items 101-110 of 145 (15 Page(s) Totally)
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