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Showing items 26-50 of 83 (4 Page(s) Totally)
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| 國立成功大學 |
2012-11 |
GaN Schottky Barrier Photodetectors with a beta-Ga2O3 Cap Layer
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Huang, Zhen-Da; Chuang, Ricky Wenkuei; Weng, Wen-Yin; Chang, Shoou-Jinn; Chiu, Chiu-Jung; Wu, San-Lein |
| 國立成功大學 |
2012-09-17 |
Impact of oxygen annealing on high-k gate stack defects characterized by random telegraph noise
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Chiu, Hsu Feng; Wu, San Lein; Chang, Yee Shyi; Chang, Shoou Jinn; Chen, Jone Fang; Tsai, Shih Chang; Hsu, Che Hua; Lai, Chien Ming; Hsu, Chia Wei; Cheng, Osbert |
| 國立成功大學 |
2012-09 |
Low-Frequency Noise Characteristics of GaN Schottky Barrier Photodetectors Prepared With Nickel Annealing
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Chen, Tse-Pu; Young, Sheng-Joue; Chang, Shoou-Jinn; Huang, Bohr-Ran; Wang, Shih-Ming; Hsiao, Chih-Hung; Wu, San-Lein; Yang, Chun-Bo |
| 國立成功大學 |
2012-07 |
Correlation Between Random Telegraph Noise and 1/f Noise Parameters in 28-nm pMOSFETs With Tip-Shaped SiGe Source/Drain
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Wang, Bo Chin; Wu, San Lein; Huang, Chien Wei; Lu, Yu Ying; Chang, Shoou Jinn; Lin, Yu Min; Lee, Kun Hsien; Cheng, Osbert |
| 國立成功大學 |
2012-06-15 |
Comparison studies of InGaN epitaxy with trimethylgallium and triethylgallium for photosensors application
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Lee, Kai-Hsuan; Chang, Ping-Chuan; Chang, Shoou-Jinn; Su, Yan-Kuin; Wu, San-Lein; Pilkuhn, Manfred |
| 國立成功大學 |
2012-03 |
GaN-based Schottky barrier ultraviolet photodetector with a 5-pair AlGaN-GaN intermediate layer
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Lee, Kai Hsuan; Chang, Ping Chuan; Chang, Shoou Jinn; Wu, San Lein |
| 國立成功大學 |
2012-02 |
Characterization of Oxide Tarps in 28 nm p-Type Metal-Oxide-Semiconductor Field-Effect Transistors with Tip-Shaped SiGe Source/Drain Based on Random Telegraph Noise
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Wang, Bo Chin; Wu, San Lein; Huang, Chien Wei; Lu, Yu Ying; Chang, Shoou Jinn; Lin, Yu Min; Lee, Kun Hsien; Cheng, Osbert |
| 國立臺灣科技大學 |
2012 |
Low-Frequency Noise Characteristics of GaN Schottky Barrier Photodetectors Prepared With Nickel Annealing
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Chen, Tse-Pu;Young, Sheng-Joue;Chang, Shoou-Jinn;Huang, Bohr-Ran;Wang, Shih-Ming;Hsiao, Chih-Hung;Wu, San-Lein;Yang, Chun-Bo |
| 國立成功大學 |
2011-09 |
Origin of Stress Memorization Mechanism in Strained-Si nMOSFETs Using a Low-Cost Stress-Memorization Technique
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Huang, Yao-Tsung; Wu, San-Lein; Chang, Shoou-Jinn; Kuo, Cheng-Wen; Chen, Ya-Ting; Cheng, Yao-Chin; Cheng, Osbert |
| 國立成功大學 |
2011-08 |
InGaN Metal-Semiconductor-Metal Photodetectors With Aluminum Nitride Cap Layers
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Lee, Kai-Hsuan; Chang, Ping-Chuan; Chang, Shoou-Jinn; Wu, San-Lein |
| 國立成功大學 |
2011-06 |
Temperature Dependence of Electrical Characteristics of Strained nMOSFETs Using Stress Memorization Technique
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Huang, Po Chin; Wu, San Lein; Chang, Shoou Jinn; Kuo, Cheng Wen; Chang, Ching Yao; Huang, Yao Tsung; Cheng, Yao Chin; Cheng, Osbert |
| 國立成功大學 |
2011-06 |
Characteristics of Si/SiO(2) Interface Properties for CMOS Fabricated on Hybrid Orientation Substrate Using Amorphization/Templated Recrystallization (ATR) Method
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Huang, Po Chin; Wu, San Lein; Chang, Shoou Jinn; Huang, Yao Tsung; Chen, Jone F.; Lin, Chien Ting; Ma, Mike; Cheng, Osbert |
| 國立成功大學 |
2011-05 |
Enhancement of CMOSFETs Performance by Utilizing SACVD-Based Shallow Trench Isolation for the 40-nm Node and Beyond
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Huang, Yao-Tsung; Wu, San-Lein; Chang, Shoou-Jinn; Hung, Chin-Kai; Wang, Tzu-Juei; Kuo, Cheng-Wen; Huang, Cheng-Tung; Cheng, Osbert |
| 國立成功大學 |
2011-04 |
Investigation of stress memorization process on low-frequency noise performance for strained Si n-type metal-oxide-semiconductor field-effect transistors
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Kuo, Cheng-Wen;Wu, San-Lein;Lin, Hau-Yu;Huang, Yao-Tsung;Chang, Shoou-Jinn;Hong, De-Gong;Wu, Chung-Yi;Cheng, Yao-Chin;Cheng, Osbert |
| 國立成功大學 |
2011-03-21 |
Influences of surface reconstruction on the atomic-layer-deposited HfO(2)/Al(2)O(3)/n-InAs metal-oxide-semiconductor capacitors
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Lin, Hau-Yu; Wu, San-Lein; Cheng, Chao-Ching; Ko, Chih-Hsin; Wann, Clement H.; Lin, You-Ru; Chang, Shoou-Jinn; Wu, Tai-Bor |
| 國立成功大學 |
2011-03-15 |
Effect of annealing time on Si/SiO(2) interface property for CMOS fabricated on hybrid orientation substrate with ATR method
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Huang, Po Chin; Wu, San Lein; Chang, Shoou Jinn; Huang, Yao Tsung; Lin, Chien Ting; Ma, Mike; Cheng, Osbert |
| 國立成功大學 |
2011 |
Influence of surface reconstruction on the atomic-layer-deposited HfO2/Al2O3/n-InAs metal-oxide-semiconductor capacitors
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Lin, Hau-Yu;Wu, San-Lein;Cheng, Chao-Ching;Ko, Chih-Hsin;Wann, Clement H.;Lin, You-Ru;Chang, Shoou-Jinn;Wu, Tai-Bor |
| 國立成功大學 |
2009-08 |
DC and 1/f noise characteristics of strained-Si nMOSFETs using chemical-mechanical-polishing technique
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Lin, Hau Yu; Wu, San Lein; Chang, Shoou Jinn; Kuo, Cheng Wen; Wang, Yen Ping; Hung, Shang Chao |
| 國立成功大學 |
2009-08 |
Investigation of interface characteristics in strained-Si nMOSFETs
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Kuo, Cheng Wen; Wu, San Lein; Chang, Shoou Jinn; Lin, Hau Yu; Wang, Yen Ping; Hung, Shang Chao |
| 國立成功大學 |
2009-07 |
AlGaN/GaN Schottky Barrier UV Photodetectors With a GaN Sandwich Layer
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Lee, K. H.; Chang, Ping-Chuan; Chang, Shoou-Jinn; Wang, Y. C.; Yu, Chia-Lin; Wu, San-Lein |
| 國立成功大學 |
2009-04 |
Impact of Ge Content on Flicker Noise Behavior of Strained-SiGe p-Type Metal-Oxide-Semiconductor Field-Effect Transistors
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Wu, San-Lein; Wu, Chung Yi; Lin, Hau-Yu; Kuo, Cheng-Wen; Chen, Shin-Hsin; Lin, Chung Hsiung; Chang, Shoou-Jinn |
| 國立成功大學 |
2009-04 |
Study of Enhanced Impact Ionization in Strained-SiGe p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors
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Huang, Po-Chin; Kang, Ting-Kuo; Wang, Bo-Chin; Wu, San-Lein; Chang, Shoou-Jinn |
| 國立成功大學 |
2009-01 |
Strained-Si nMOSFET with a raised source/drain structure
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Lin, H. Y.; Wu, San-Lein; Chang, Shoou-Jinn; Wang, Yen-Ping; Lin, Yu-Min; Kuo, Cheng-Wen |
| 國立成功大學 |
2008-11 |
Investigation of Metallized Source/Drain Extension for High-Performance Strained NMOSFETs
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Wang, Tzu-Juei; Ko, Chih-Hsin; Lin, Hong-Nien; Chang, Shoou-Jinn; Wu, San-Lein; Kuan, Ta-Ming; Lee, Wen-Chin |
| 國立成功大學 |
2008-11 |
GaN-Based MSM Photodetectors Prepared on Patterned Sapphire Substrates
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Chang, Shoou-Jinn; Jhou, Y. D.; Lin, Y. C.; Wu, San-Lein; Chen, C. H.; Wen, Ten-Chin; Wu, L. W. |
Showing items 26-50 of 83 (4 Page(s) Totally)
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