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Showing items 51-75 of 83 (4 Page(s) Totally)
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| 國立成功大學 |
2008-10 |
Low-frequency noise of strained-Si nMOSFETs fabricated on a chemical-mechanical-polished SiGe virtual substrate
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Lin, H. Y.; Wu, San-Lein; Chang, Shoou-Jinn; Wang, Yen-Ping; Kuo, Cheng-Wen |
| 國立成功大學 |
2008-04 |
Investigation of impact ionization in strained-Si n-channel metal-oxide-semiconductor field-effect transistors
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Kang, Ting-Kuo; Huang, Po-Chin; Sa, Yu-Huan; Wu, San-Lein; Chang, Shoou-Jinn |
| 國立成功大學 |
2008-02 |
The effects of mechanical uniaxial stress on junction leakage in nanoscale CMOSFETs
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Wang, Tzu-Juei; Ko, Chih-Hsin; Chang, Shoou-Jinn; Wu, San-Lein; Kuan, Ta-Ming; Lee, Wen-Chin |
| 國立成功大學 |
2007-07-19 |
Negative bias temperature instability characteristics of strained SiGe pMOSFETs
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Lee, C. H.; Wu, San-Lein; Chen, Shin-Hsin; Kuo, Cheng-Wen; Lin, Y. M.; Chen, J. E.; Chang, Shoou-Jinn |
| 國立成功大學 |
2007-05 |
Impact of SiN on performance in novel complementary metal-oxide-semiconductor architecture using substrate strained-SiGe and mechanical strained-Si technology
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Lin, Chung-Hsiung; Wu, San-Lein; Wu, Chung-Yi; Kang, Ting-Kuo; Huang, Kuang-Chih; Chang, Shoou-Jinn |
| 國立成功大學 |
2007-01 |
Tradeoff between short channel effect and mobility in strained-Si nMOSFETs
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Wang, Yen-Ping; Wu, San-Lein; Chang, Shoou-Jinn |
| 國立成功大學 |
2007-01 |
Low-frequency noise characteristics in strained-Si nMOSFETs
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Wang, Yen Ping; Wu, San Lein; Chang, Shoou Jinn |
| 國立成功大學 |
2007 |
Effects of mechanical uniaxial stress on SiGe HBT characteristics
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Wang, Tzu-Juei; Chen, Hung-Wei; Yeh, Ping-Chun; Ko, Chih-Hsin; Chang, Shoou-Jinn; Yeh, John; Wu, San-Lein; Lee, Chwan-Ying; Lee, Wen-Chin; Tang, Denny D. |
| 國立成功大學 |
2007 |
High-detectivity GaN MSM photodetectors with low-temperature GaN cap layers and Ir/Pt contact electrodes
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Yu, Chia-Lin; Chang, Ping-Chuan; Chang, Shoou-Jinn; Wu, San-Lein |
| 國立成功大學 |
2006-05 |
Inductively coupled plasma etching of Si1-xGex in CF4/Ar and Cl-2/Ar discharges
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Wu, San-Lein; Lee, Chun-Hsin; Chang, Shoou-Jinn; Lin, Yu-Min |
| 國立成功大學 |
2006-05 |
Hole confinement and 1/f noise characteristics of SiGe double-quantum-well p-type metal-oxide-semiconductor field-effect transistors
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Lin, Yu-Min; Wu, San-Lein; Chang, Shoou-Jinn; Chen, Pang-Shiu; Liu, C. W. |
| 國立成功大學 |
2006-01 |
Enhanced CMOS performances using substrate strained-SiGe and mechanical strained-Si technology
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Wu, San-Lein; Lin, Yu-Min; Chang, Shoou-Jinn; Lu, Shin-Chi; Chen, Pang-Shiu; Liu, Chee-Wee |
| 國立成功大學 |
2006-01 |
Controlled misfit dislocation technology in strained silicon MOSFETs
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Wu, San-Lein; Wang, Yen-Ping; Chang, Shoou-Jinn |
| 國立臺灣大學 |
2006 |
Hole Confinement and 1/ f Noise Characteristics of SiGe Double-Quantum-Well p-Type Metal–Oxide–Semiconductor Field-Effect Transistors
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Lin, Yu Min; Wu, San Lein; Chang, Shoou Jinn; Chen, Pang Shiu; Liu, Chee Wee |
| 國立臺灣大學 |
2006 |
Enhanced CMOS Performances Using Substrate Strained-SiGe and Mechanical Strained-Si Technology
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Wu, San Lein; Lin, Yu Min; Chang, Shoou Jinn; Lu, Shin Chi; Chen, Pang Shiu; Liu, Chee Wee |
| 臺大學術典藏 |
2006 |
Hole Confinement and 1/ f Noise Characteristics of SiGe Double-Quantum-Well p-Type Metal–Oxide–Semiconductor Field-Effect Transistors
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Lin, Yu Min; Wu, San Lein; Chang, Shoou Jinn; Chen, Pang Shiu; Liu, Chee Wee; Lin, Yu Min; Wu, San Lein; Chang, Shoou Jinn; Chen, Pang Shiu; Liu, Chee Wee |
| 臺大學術典藏 |
2006 |
Enhanced CMOS Performances Using Substrate Strained-SiGe and Mechanical Strained-Si Technology
|
Wu, San Lein; Lin, Yu Min; Chang, Shoou Jinn; Lu, Shin Chi; Chen, Pang Shiu; Liu, Chee Wee; Wu, San Lein; Lin, Yu Min; Chang, Shoou Jinn; Lu, Shin Chi; Chen, Pang Shiu; Liu, Chee Wee |
| 國立成功大學 |
2005-02 |
SiGe/Si PMOSFET using graded channel technique
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Lin, Yu-Min; Wu, San-Lein; Chang, Shoou-Jinn; Chen, Peng-Shiu; Liu, Chee-Wee |
| 國立成功大學 |
2005-02 |
High-performance SiGe heterostructure FET grown on silicon-on-insulator
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Chien, Pei-Wei; Wu, San-Lein; Chang, Shoou-Jinn; Koh, Shinji; Shiraki, Yasuhiro |
| 國立成功大學 |
2005-02 |
SiGe heterostucture field-effect transistor with ICP mesa treatments
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Lee, Chun-Hsin; Wu, San-Lein; Chang, Shoou-Jinn |
| 國立成功大學 |
2005 |
Optimized Si-cap layer thickness for tensile-strained-Si/compressively strained SiGe dual-channel transistors in 0.13 mu m complementary metal oxide semiconductor technology
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Wang, Yen-Ping; Chang, Shoou-Jinn; Wu, San-Lein |
| 國立成功大學 |
2005 |
Investigation of transport mechanism for strained Si n metal-oxide-semiconductor field-effect transistor grown on multi-layer substrate
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Wang, Yen-Ping; Wu, San-Lein; Chang, Shoou-Jinn |
| 國立成功大學 |
2004-08 |
Improved performance of SiGe doped-channel field-effect transistor using inductively coupled plasma etch
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Lee, Chun-Hsin; Wu, San-Lein; Chang, Shoou-Jinn |
| 國立成功大學 |
2004-07 |
Influences of delta-doping position on the characteristics of SiGe-Si DCFETs
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Wu,San-Lein; Chien, Pei-Wei; Chang, Shoou-Jinn; Koh, S.; Shiraki, Y. |
| 國立成功大學 |
2003-11-01 |
P-type enhancement-mode SiGe doped-channel field-effect transistor
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Lin, Yu-Min; Wu, San-Lein; Chang, Shoou-Jinn; Koh, Shinji; Shiraki, Yasuhiro |
Showing items 51-75 of 83 (4 Page(s) Totally)
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