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机构 日期 题名 作者
國立交通大學 2014-12-08T15:17:20Z Cyclic m-cycle systems with m <= 32 or m=2q with q a prime power (vol 14, pg 66, 2005) Wu, SL; Fu, HL
國立交通大學 2014-12-08T15:05:37Z IMPROVEMENT ON THE CURRENT-VOLTAGE CHARACTERISTICS OF POLYCRYSTALLINE SILICON CONTACTED N+-P JUNCTIONS WITH HIGH-FIELD STRESSING WU, SL; LEE, CL; LEI, TF
國立交通大學 2014-12-08T15:05:26Z IMPROVEMENT OF ELECTRICAL CHARACTERISTICS OF POLYCRYSTALLINE SILICON-CONTACTED DIODES AFTER FORWARD BIAS STRESSING WU, SL; LEE, CL; LEI, TF
國立交通大學 2014-12-08T15:05:03Z HIGH-PERFORMANCE POLYSILICON CONTACTED SHALLOW JUNCTIONS FORMED BY STACKED-AMORPHOUS-SILICON FILMS WU, SL; LEE, CL; LEI, TF
國立交通大學 2014-12-08T15:04:50Z INVESTIGATION ON THE INTERFACE OF THE POLYCRYSTALLINE SILICON CONTACTED DIODE FORMED WITH A STACKED AMORPHOUS-SILICON FILM WU, SL; LEE, CL; LEI, TF; LEE, TL; CHEN, LJ
國立交通大學 2014-12-08T15:04:48Z CHARACTERIZATION OF ULTRATHIN OXIDE PREPARED BY LOW-TEMPERATURE WAFER LOADING AND NITROGEN PREANNEALING BEFORE OXIDATION WU, SL; LEE, CL; LEI, TF; LIANG, MS
國立交通大學 2014-12-08T15:04:37Z ELECTRICAL CHARACTERISTICS OF TEXTURED POLYSILICON OXIDE PREPARED BY A LOW-TEMPERATURE WAFER LOADING AND N-2 PREANNEALING PROCESS WU, SL; LIN, TY; LEE, CL; LEI, TF
國立交通大學 2014-12-08T15:04:29Z ULTRATHIN TEXTURED POLYCRYSTALLINE OXIDE WITH A HIGH ELECTRON CONDUCTION EFFICIENCY PREPARED BY THERMAL-OXIDATION OF THIN POLYCRYSTALLINE SILICON FILM ON N+ POLYCRYSTALLINE SILICON WU, SL; LEE, CL; LEI, TF
國立交通大學 2014-12-08T15:04:26Z ELECTRICAL CHARACTERISTICS OF A STACKED NITRIDE MICROCRYSTALLINE-SILICON OXIDE SILICON STRUCTURE WU, SL; LEE, CL; LEI, TF
國立交通大學 2014-12-08T15:04:25Z TUNNEL OXIDE PREPARED BY THERMAL-OXIDATION OF THIN POLYSILICON FILM ON SILICON (TOPS) WU, SL; LEE, CL; LEI, TF

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