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Showing items 11-16 of 16 (1 Page(s) Totally)
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| 國立交通大學 |
2019-12-13T01:12:50Z |
Demonstration of Annealing-free Metal-Insulator-Semiconductor (MIS) Ohmic Contacts on a GaN Substrate using Low Work-function Metal Ytterbium (Yb) and Al2O3 Interfacial Layer
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Wu, Tian-Li; Tseng, Yang-Yan; Huang, Chih-Fang; Chen, Zih-Sin; Lin, Chih-Chien; Chung, Chung-Jen; Huang, Po-Kai; Kao, Kuo-Hsing |
| 國立交通大學 |
2019-08-02T02:24:17Z |
Investigation of Degradation Phenomena in GaN-on-Si Power MIS-HEMTs under Source Current and Drain Bias Stresses
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Yang, Chih-Yi; Wu, Tian-Li; Hsieh, Tin-En; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T05:58:23Z |
Effects of Annealing on Ferroelectric Hafnium-Zirconium-Oxide-Based Transistor Technology
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Chen, Yi-Hsuan; Su, Chun-Jung; Hu, Chenming; Wu, Tian-Li |
| 國立交通大學 |
2018-08-21T05:57:09Z |
Bias- and Temperature-Assisted Trapping/De-trapping of R-ON Degradation in D-mode AlGaN/GaN MIS-HEMTs on a Si substrate
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Zhang, Jin-Ming; Hsieh, Ting-En; Wu, Tian-Li; Chen, Szu-Hao; Chen, Shi-Xuan; Chou, Po-Chien; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:53:02Z |
Analysis of the Gate Capacitance-Voltage Characteristics in p-GaN/AlGaN/GaN Heterostructures
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Wu, Tian-Li; Bakeroot, Benoit; Liang, Hu; Posthuma, Niels; You, Shuzhen; Ronchi, Nicolo; Stoffels, Steve; Marcon, Denis; Decoutere, Stefaan |
| 國立交通大學 |
2014-12-08T15:23:24Z |
Characteristics of 4H-SiC RF MOSFETs on a Semi-insulating Substrate
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Wu, Tian-Li; Huang, Chih-Fang; Cheng, Chun-Hu |
Showing items 11-16 of 16 (1 Page(s) Totally)
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