|
|
Taiwan Academic Institutional Repository >
Browse by Author
|
"wu wu w f"
Showing items 11-20 of 23 (3 Page(s) Totally)
<< < 1 2 3 > >>
View [10|25|50] records per page
| 國立成功大學 |
2022 |
Integration Design and Process of 3-D Heterogeneous 6T SRAM with Double Layer Transferred Ge/2Si CFET and IGZO Pass Gates for 42% Reduced Cell Size
|
Yu, X.-R.;Chuang, M.-H.;Chang, S.-W.;Chang, W.-H.;Hong, T.-C.;Chiang, Chiang C.-H.;Lu, W.-H.;Yang, C.-Y.;Chen, W.-J.;Lin, J.-H.;Wu, P.-H.;Sun, T.-C.;Kola, S.;Yang, Yang Y.-S.;Da, Y.;Sung, P.-J.;Wu, C.-T.;Cho, T.-C.;Luo, G.-L.;Kao, Kao K.-H.;Chiang, M.-H.;Ma, W.C.-Y.;Su, C.-J.;Chao, T.-S.;Maeda, T.;Samukawa, Samukawa S.;Li, Y.;Lee, Y.-J.;Wu, Wu W.-F.;Tarng, J.-H.;Wang, Y.-H. |
| 國立成功大學 |
2021 |
Ultra-Low Power Robust 3bit/cell Hf0.5Zr0.5O2 Ferroelectric FinFET with High Endurance for Advanced Computing-In-Memory Technology
|
De, S.;Lu, D.D.;Le, H.-H.;Mazumder, S.;Lee, Y.-J.;Tseng, W.-C.;Qiu, B.-H.;Baig, Md.A.;Sung, P.-J.;Su, C.-J.;Wu, C.-T.;Wu, Wu W.-F.;Yeh, W.-K.;Wang, Y.-H. |
| 國立成功大學 |
2020 |
Process and Structure Considerations for the Post FinFET Era
|
Su, C.-J.;Sung, P.-J.;Kao, Kao K.-H.;Lee, Y.-J.;Wu, Wu W.-F.;Yeh, W.-K. |
| 國立成功大學 |
2020 |
3D integration of vertical-stacking of MoS2and Si CMOS featuring embedded 2T1R configuration demonstrated on full wafers
|
Su, C.J.;Huang, M.K.;Lee, K.S.;Hu, V.P.H.;Huang, Y.F.;Zheng, B.C.;Yao, C.H.;Lin, N.C.;Kao, Kao K.H.;Hong, T.C.;Sung, P.J.;Wu, C.T.;Yu, T.Y.;Lin, K.L.;Tseng, Y.C.;Lin, C.L.;Lee, Y.J.;Chao, T.S.;Li, J.Y.;Wu, Wu W.F.;Shieh, J.M.;Wang, Y.H.;Yeh, W.K. |
| 國立成功大學 |
2019 |
A Comprehensive Kinetical Modeling of Polymorphic Phase Distribution of Ferroelectric-Dielectrics and Interfacial Energy Effects on Negative Capacitance FETs
|
Tang, Y.-T.;Fan, C.-L.;Kao, Y.-C.;Modolo, N.;Su, C.-J.;Wu, T.-L.;Kao, Kao K.-H.;Wu, P.-J.;Hsaio, S.-W.;Useinov, A.;Su, P.;Wu, Wu W.-F.;Huang, G.-W.;Shieh, J.-M.;Yeh, W.-K.;Wang, Y.-H. |
| 國立成功大學 |
2019 |
First Demonstration of CMOS Inverter and 6T-SRAM Based on GAA CFETs Structure for 3D-IC Applications
|
Chang, S.-W.;Li, J.-H.;Huang, M.-K.;Huang, Y.-C.;Huang, S.-T.;Wang, H.-C.;Huang, Y.-J.;Wang, J.-Y.;Yu, L.-W.;Huang, Y.-F.;Hsueh, F.-K.;Sung, P.-J.;Wu, C.-T.;Ma, W.C.-Y.;Kao, Kao K.-H.;Lee, Y.-J.;Lin, C.-L.;Chuang, R.W.;Huang, K.-P.;Samukawa, Samukawa S.;Li, Y.;Lee, W.-H.;Chu, T.-Y.;Chao, T.-S.;Huang, G.-W.;Wu, Wu W.-F.;Li, J.-Y.;Shieh, J.-M.;Yeh, W.-K.;Wang, Y.-H.;Lu, D.D.;Wang, C.-J.;Lin, N.-C.;Su, C.-J.;Lo, S.-H.;Huang, Huang H.-F. |
| 國立成功大學 |
2019 |
Voltage Transfer Characteristic Matching by Different Nanosheet Layer Numbers of Vertically Stacked Junctionless CMOS Inverter for SoP/3D-ICs applications
|
Sung, P.-J.;Chang, Chang C.-Y.;Chen, L.-Y.;Kao, Kao K.-H.;Su, C.-J.;Liao, T.-H.;Fang, C.-C.;Wang, C.-J.;Hong, T.-C.;Jao, C.-Y.;Hsu, Hsu H.-S.;Luo, S.-X.;Wang, Y.-S.;Huang, Huang H.-F.;Li, J.-H.;Huang, Y.-C.;Hsueh, F.-K.;Wu, C.-T.;Huang, Y.-M.;Hou, F.-J.;Luo, G.-L.;Huang, Y.-C.;Shen, Y.-L.;Ma, W.C.-Y.;Huang, K.-P.;Lin, K.-L.;Samukawa, Samukawa S.;Li, Y.;Huang, G.-W.;Lee, Y.-J.;Li, J.-Y.;Wu, Wu W.-F.;Shieh, J.-M.;Chao, T.-S.;Yeh, W.-K.;Wang, Y.-H. |
| 國立成功大學 |
2019 |
Fabrication of omega-gated negative capacitance finfets and SRAM
|
Sung, P.-J.;Su, C.-J.;Lu, D.D.;Luo, S.-X.;Kao, Kao K.-H.;Ciou, J.-Y.;Jao, C.-Y.;Hsu, Hsu H.-S.;Wang, C.-J.;Hong, T.-C.;Liao, T.-H.;Fang, C.-C.;Wang, Y.-S.;Huang, Huang H.-F.;Li, J.-H.;Huang, Y.-C.;Hsueh, F.-K.;Wu, C.-T.;Ma, W.C.-Y.;Huang, K.-P.;Lee, Y.-J.;Chao, T.-S.;Li, J.-Y.;Wu, Wu W.-F.;Yeh, W.-K.;Wang, Y.-H. |
| 國立成功大學 |
2017 |
High performance complementary Ge peaking FinFETs by room temperature neutral beam oxidation for sub-7 nm technology node applications
|
Lee, Y.-J.;Hong, T.-C.;Hsueh, F.-K.;Sung, P.-J.;Chen, Chen C.-Y.;Chuang, S.-S.;Cho, T.-C.;Noda, S.;Tsou, Y.-C.;Kao, Kao K.-H.;Wu, C.-T.;Yu, T.-Y.;Jian, Y.-L.;Su, C.-J.;Huang, Y.-M.;Huang, W.-H.;Chen, B.-Y.;Chen, M.-C.;Huang, K.-P.;Li, J.-Y.;Chen, M.-J.;Li, Y.;Samukawa, Samukawa S.;Wu, Wu W.-F.;Huang, G.-W.;Shieh, J.-M.;Tseng, Tseng T.-Y.;Chao, T.-S.;Wang, Y.-H.;Yeh, W.-K. |
| 國立成功大學 |
2017 |
Nano-scaled Ge FinFETs with low temperature ferroelectric HfZrOx on specific interfacial layers exhibiting 65% S.S. reduction and improved ION
|
Su, C.-J.;Tang, Y.-T.;Tsou, Y.-C.;Sung, P.-J.;Hou, F.-J.;Wang, C.-J.;Chung, S.-T.;Hsieh, C.-Y.;Yeh, Yeh Y.-S.;Hsueh, F.-K.;Kao, Kao K.-H.;Chuang, S.-S.;Wu, C.-T.;You, T.-Y.;Jian, Y.-L.;Chou, T.-H.;Shen, Y.-L.;Chen, B.-Y.;Luo, G.-L.;Hong, T.-C.;Huang, K.-P.;Chen, M.-C.;Lee, Y.-J.;Chao, T.-S.;Tseng, Tseng T.-Y.;Wu, Wu W.-F.;Huang, G.-W.;Shieh, J.-M.;Yeh, W.-K.;Wang, Y.-H. |
Showing items 11-20 of 23 (3 Page(s) Totally)
<< < 1 2 3 > >>
View [10|25|50] records per page
|
