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Showing items 361-370 of 372  (38 Page(s) Totally)
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Institution Date Title Author
國立臺灣大學 1993 Improved Gate Oxide Reliability by Repeated N20 Rapid Thermal Annealings 胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.
國立臺灣大學 1993 Improved Performance of n-MOSFET's with Reoxidized Nitrided Oxide (RNO) by Using N20 as the Reoxidizer 胡振國; Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Z. Y.; Wu, Y. L.
國立臺灣大學 1993 Improvement in Radiation Hardness of Reoxidized Nitrided Oxide (RNO) in the Absence of Post-Oxidation Anneal 胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.
國立臺灣大學 1993 Improved Performance of n-MOSFET's with Reoxidized Nitrided Oxide (RNO) by Using N20 as the Reoxidizer 胡振國; Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Z. Y.; Wu, Y. L.
臺大學術典藏 1993 Improved Performance of n-MOSFET's with Reoxidized Nitrided Oxide (RNO) by Using N20 as the Reoxidizer Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Z. Y.; 胡振國; Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Z. Y.
臺大學術典藏 1993 Improved Gate Oxide Reliability by Repeated N20 Rapid Thermal Annealings Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.; 胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.
臺大學術典藏 1993 Improved Performance of n-MOSFET's with Reoxidized Nitrided Oxide (RNO) by Using N20 as the Reoxidizer Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo; 胡振國; Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.
國立臺灣大學 1992 Effect of Fast Pulling the Starting Oxide Out of Furnace on the Radiation Hardness of MOS Capacitors with Reoxidixed-Nitrided Oxides 胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.
國立臺灣大學 1992 Improvement in Surface Cleaning of Oxides by Rapid Thermal Annealing 胡振國; Lin, J. J.; Wu, Y. L.; Hwu, Jenn-Gwo; Lin, J. J.; Wu, Y. L.
臺大學術典藏 1992 Effect of Fast Pulling the Starting Oxide Out of Furnace on the Radiation Hardness of MOS Capacitors with Reoxidixed-Nitrided Oxides Wu, Y. L.; Hwu, Jenn-Gwo; 胡振國; Wu, Y. L.; Hwu, Jenn-Gwo

Showing items 361-370 of 372  (38 Page(s) Totally)
<< < 29 30 31 32 33 34 35 36 37 38 > >>
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