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Showing items 346-355 of 372  (38 Page(s) Totally)
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Institution Date Title Author
臺北醫學大學 1998 The Influence of Transient and Strong Load on Periodontium. 李勝揚; Wu C-H; Su C-Y; Wu Y-L; Chang W-J; Hsu K-D; Lee S-Y
國立臺灣大學 1995 Improvement in Reliability of n-MOSFETs by Using Rapid Thermal N20- Reoxidized Gate Oxides 胡振國; Wu, Y. L.; Wu, Z. Y.; Hwu, Jenn-Gwo; Wu, Y. L.; Wu, Z. Y.
臺大學術典藏 1995 Intrathoracic goiter with superior vena cava syndrome and tracheal compression. A case report Lee Y.-C.; Luh S.-P.; Wu Y.-L.; JANG-MING LEE; Tai H.-C.; Tai H.-C.;Wu Y.-L.;Jang-Ming Lee;Luh S.-P.;Lee Y.-C.
國立臺灣大學 1994 Subaortic Blind Mitral Pouch in a Double-Inlet Right Ventricle 邱英世; Wu, Y. L.; Chen, M. R.; Chen, B. F.; Chiu, Ing-Sh; Wu, Y. L.; Chen, M. R.; Chen, B. F.
國立臺灣大學 1994 Improvement in Radiation Hardness of n-MOSFET's with Gate Oxides Prepared by Multiple N20 Annealings 胡振國; Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo; Wu, Y. L.; Kuo, K. M.
國立臺灣大學 1994 Characterization of Metal-Oxide-Semiconductor Capacitors with Improved Gate Oxides Prepared by Repeated Rapid Thermal Annealings in N20 胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.
國立臺灣大學 1994 Design of Radiation Hard CMOS Circuits by Changing Aspect Ratios and Adding Compensation Resistors 胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.
國立臺灣大學 1994 Effect of Starting Oxide Preparation on Electrical Properties of Reoxidized Nitrided and N20-Annealed Gate Oxides 胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.
國立臺灣大學 1994 Improvement in Radiation Hardness of Gate Oxides in Metal-Oxide- Semiconductor Devices by Repeated Rapid Thermal Oxidations in N20 胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.
國立臺灣大學 1994 Reduction of Radiation-Induced Degradation in N-Channel Metal-Oxide- Semiconductor Field-Effect Transistors (MOSFET's) with Gate Oxides Prepared by Repeated Rapid Thermal N20 Annealing 胡振國; Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo; Wu, Y. L.; Kuo, K. M.

Showing items 346-355 of 372  (38 Page(s) Totally)
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