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Showing items 361-370 of 372 (38 Page(s) Totally)
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| 國立臺灣大學 |
1993 |
Improved Gate Oxide Reliability by Repeated N20 Rapid Thermal Annealings
|
胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L. |
| 國立臺灣大學 |
1993 |
Improved Performance of n-MOSFET's with Reoxidized Nitrided Oxide (RNO) by Using N20 as the Reoxidizer
|
胡振國; Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Z. Y.; Wu, Y. L. |
| 國立臺灣大學 |
1993 |
Improvement in Radiation Hardness of Reoxidized Nitrided Oxide (RNO) in the Absence of Post-Oxidation Anneal
|
胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L. |
| 國立臺灣大學 |
1993 |
Improved Performance of n-MOSFET's with Reoxidized Nitrided Oxide (RNO) by Using N20 as the Reoxidizer
|
胡振國; Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Z. Y.; Wu, Y. L. |
| 臺大學術典藏 |
1993 |
Improved Performance of n-MOSFET's with Reoxidized Nitrided Oxide (RNO) by Using N20 as the Reoxidizer
|
Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Z. Y.; 胡振國; Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Z. Y. |
| 臺大學術典藏 |
1993 |
Improved Gate Oxide Reliability by Repeated N20 Rapid Thermal Annealings
|
Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.; 胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L. |
| 臺大學術典藏 |
1993 |
Improved Performance of n-MOSFET's with Reoxidized Nitrided Oxide (RNO) by Using N20 as the Reoxidizer
|
Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo; 胡振國; Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L. |
| 國立臺灣大學 |
1992 |
Effect of Fast Pulling the Starting Oxide Out of Furnace on the Radiation Hardness of MOS Capacitors with Reoxidixed-Nitrided Oxides
|
胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L. |
| 國立臺灣大學 |
1992 |
Improvement in Surface Cleaning of Oxides by Rapid Thermal Annealing
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胡振國; Lin, J. J.; Wu, Y. L.; Hwu, Jenn-Gwo; Lin, J. J.; Wu, Y. L. |
| 臺大學術典藏 |
1992 |
Effect of Fast Pulling the Starting Oxide Out of Furnace on the Radiation Hardness of MOS Capacitors with Reoxidixed-Nitrided Oxides
|
Wu, Y. L.; Hwu, Jenn-Gwo; 胡振國; Wu, Y. L.; Hwu, Jenn-Gwo |
Showing items 361-370 of 372 (38 Page(s) Totally)
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