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Showing items 1-21 of 21  (1 Page(s) Totally)
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Institution Date Title Author
國立交通大學 2014-12-08T15:44:44Z Characterization of excimer-laser-annealed polycrystalline silicon films grown by ultrahigh-vacuum chemical vapor deposition Chen, YC; Wu, YCS; Tung, IC; Chao, CW; Feng, MS; Chen, HC
國立交通大學 2014-12-08T15:42:48Z High-temperature healing of interfacial voids in GaAs wafer bonding Wu, YCS; Liu, PC; Feigelson, RS; Route, RK
國立交通大學 2014-12-08T15:42:03Z Healing kinetics of interfacial voids in GaAs wafer bonding Wu, YCS; Hu, GZ
國立交通大學 2014-12-08T15:41:48Z Electroless plating with Pd induced crystallization of amorphous silicon thin films Hu, GR; Wu, YCS; Chao, CW; Huang, TJ
國立交通大學 2014-12-08T15:41:08Z Device characteristics of polysilicon thin-film transistors fabricated by electroless plating Ni-induced crystallization of amorphous Si Chao, CW; Wu, YCS; Hu, GR; Feng, MS
國立交通大學 2014-12-08T15:40:51Z The growth mechanism of micron-size V defects on the hydride vapor phase epitaxy grown undoped GaN films Lin, PY; Wu, YCS
國立交通大學 2014-12-08T15:40:24Z Selective growth of carbon nanotubes on prepatterned amorphous silicon thin films by electroless plating Ni Chao, CW; Wu, YCS; Hu, GR; Feng, MS
國立交通大學 2014-12-08T15:40:21Z Wafer bonding by Ni-induced crystallization of amorphous silicon Chao, CP; Wu, YCS; Lee, TL; Wang, YH
國立交通大學 2014-12-08T15:39:45Z Synthesis of microcrystalline silicon at room temperature using ICP Wu, JH; Shieh, JM; Dai, BT; Wu, YCS
國立交通大學 2014-12-08T15:37:17Z Effects of annealing temperature on electrical resistance of bonded n-GaAs wafers Liu, PC; Lu, CL; Wu, YCS; Cheng, JH; Ouyang, H
國立交通大學 2014-12-08T15:37:06Z Bonding line-patterned In0.5Ga0.5P layer on GaP substrate for the successive growth of high-brightness LED structures Liu, PC; Wu, YCS
國立交通大學 2014-12-08T15:26:17Z Low temperature polycrystalline silicon thin film transistors fabricated by electroless plating Ni induced crystallization of amorphous Si Chao, CW; Wu, YCS; Chen, YC; Hu, GR; Feng, MS
國立交通大學 2014-12-08T15:26:17Z The effects of oxygen concentration in Ni film on the metal induced crystallization of amorphous silicon Lin, YD; Wu, YCS; Chao, CW; Hu, GR
國立交通大學 2014-12-08T15:26:17Z The effects of Pd2Si on the electroless plating Pd induced crystallization of amorphous silicon thin films Huang, CTJ; Hu, GR; Wu, YCS; Chao, CW
國立交通大學 2014-12-08T15:26:16Z Wafer bonding using indium tin oxide intermediate layer for high brightness LEDs Liu, PC; Hou, CY; Wu, YCS
國立交通大學 2014-12-08T15:19:18Z Wafer bonding for high-brightness light-emitting diodes via indium tin oxide intermediate layers Liu, PC; Hou, CY; Wu, YCS
國立交通大學 2014-12-08T15:18:15Z Effects of tensile stress on growth of Ni-metal-induced lateral crystallization of amorphous silicon Hou, CY; Wu, YCS
國立交通大學 2014-12-08T15:18:15Z Thermal annealing effect of indium tin oxide contact to GaN light-emitting diodes Hsu, CY; Lan, WH; Wu, YCS
國立交通大學 2014-12-08T15:17:51Z The influences of contact interfaces between the indium tin oxide-based contact layer and GaN-based LEDs Hsu, CY; Lan, WH; Wu, YCS
國立交通大學 2014-12-08T15:17:35Z A simple method for gettering of nickel within the Ni-metal-induced lateral crystallization polycrystalline silicon film Hou, CY; Wu, YCS
國立交通大學 2014-12-08T15:17:05Z Anomalous electrical performance of nanoscaled interfacial oxides for bonded n-GaAs wafers Hao, OY; Wu, YCS; Chiou, HH; Liu, CC; Cheng, JH; Wen, OY; Chiou, SH; Shiue, ST; Chueh, YL; Chou, LJ

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