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Taiwan Academic Institutional Repository >
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"wu yh"
Showing items 61-70 of 117 (12 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:45:09Z |
The buried oxide properties in oxygen plasma-enhanced low-temperature wafer bonding
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Wu, YH; Huang, CH; Chen, WJ; Lin, CN; Chin, A |
| 國立交通大學 |
2014-12-08T15:45:06Z |
Electrical characteristics of high quality La2O3 gate dielectric with equivalent oxide thickness of 5 angstrom
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Wu, YH; Yang, MY; Chin, A; Chen, WJ; Kwei, CM |
| 國立交通大學 |
2014-12-08T15:45:06Z |
High temperature formed SiGeP-MOSFET's with good device characteristics
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Wu, YH; Chin, A |
| 國立交通大學 |
2014-12-08T15:44:51Z |
Fabrication of very high resistivity Si with low loss and cross talk
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Wu, YH; Chin, A; Shih, KH; Wu, CC; Liao, CP; Pai, SC; Chi, CC |
| 國立交通大學 |
2014-12-08T15:44:42Z |
The effect of copper on gate oxide integrity
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Lin, YH; Wu, YH; Chin, A; Pan, FM |
| 國立交通大學 |
2014-12-08T15:43:56Z |
Characteristics of fluorinated amorphous carbon films and implementation of 0.15 mu m Cu/a-C : F damascene interconnection
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Shieh, JM; Suen, SC; Tsai, KC; Dai, BT; Wu, YC; Wu, YH |
| 國立交通大學 |
2014-12-08T15:42:15Z |
Reduction of etching plasma damage on low dielectric constant fluorinated amorphous carbon films by multiple H-2 plasma treatment
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Shieh, JM; Tsai, KC; Dai, BT; Wu, YC; Wu, YH |
| 國立交通大學 |
2014-12-08T15:27:03Z |
Rf loss and cross talk on extremely high resistivity (10K-1M Omega-cm) Si fabricated by ion implantation
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Wu, YH; Chin, A; Shih, KH; Wu, CC; Liao, CP; Pai, SC; Chi, CC |
| 國立交通大學 |
2014-12-08T15:27:03Z |
The performance limiting factors as RF MOSFETs scaling down
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Wu, YH; Chin, A; Liang, CS; Wu, CC |
| 國立交通大學 |
2014-12-08T15:27:03Z |
High quality La2O3 and Al2O3 gate dielectrics with equivalent oxide thickness 5-10 angstrom
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Chin, A; Wu, YH; Chen, SB; Liao, CC; Chen, WJ |
Showing items 61-70 of 117 (12 Page(s) Totally)
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