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Showing items 46-70 of 116 (5 Page(s) Totally)
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| 國家衛生研究院 |
2015-06 |
Clinical impact of Clostridium difficile colonization
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Hung, YP;Lee, JC;Lin, HJ;Liu, HC;Wu, YH;Tsai, PJ;Ko, WC |
| 國家衛生研究院 |
2015-06 |
Doxycycline and tigecycline: Two friendly drugs with a low association with clostridium difficile infection
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Hung, YP;Lee, JC;Lin, HJ;Liu, HC;Wu, YH;Tsai, PJ;Ko, WC |
| 國家衛生研究院 |
2015-04 |
Risk factors for Clostridium difficile-associated diarrhea among hospitalized adults with fecal toxigenic C. difficile colonization
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Lin, HJ;Hung, YP;Liu, HC;Lee, JC;Lee, CI;Wu, YH;Tsai, PJ;Ko, WC |
| 國家衛生研究院 |
2015-04 |
Reducing blood culture contamination in the emergency department effects by alcoholic chlorhexidine as anti-septic agents
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Wu, CH;Shih, FY;Chang, CJ;Hsu, HC;Wang, SW;Wu, CJ;Wu, YH;Chang, CM;Ko, WC;Chi, CH;Shih, HI |
| 國家衛生研究院 |
2015-04 |
The antimicrobial susceptibility and impact of ESBL-carrying Enterobacteriaceae in nursing home in Taiwan
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Liu, HC;Hung, YP;Lin, HJ;Liu, HC;Lee, JC;Li, CW;Wu, YH;Li, MC;Ko, WC |
| 國家衛生研究院 |
2015-03 |
Genetic polymorphisms in the prostaglandin pathway genes and risk of head and neck cancer
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Lee, WT;Huang, CC;Chen, KC;Wong, TY;Ou, CY;Tsai, ST;Yen, CJ;Fang, SY;Lo, HI;Wu, YH;Hsueh, WT;Yang, MW;Lin, FC;Hsiao, JR;Huang, JS;Chang, JY;Chang, KY;Wu, SY;Lin, CL;Wang, YH;Weng, YL;Yang, HC;Chang, JS |
| 國家衛生研究院 |
2015-01 |
The first case of severe Clostridium difficile ribotype 027 infection in Taiwan
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Hung, YP;Cia, CT;Tsai, BY;Chen, PC;Lin, HJ;Liu, HC;Lee, JC;Wu, YH;Tsai, PJ;Ko, WC |
| 國立交通大學 |
2014-12-08T15:48:53Z |
Optoelectronic characteristics of a-SiC : H-based pin thin film LEDs having a thin Mo buffer layer in contact with p-type a-Si : H
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Chen, YA; Wu, YH; Tsay, WC; Laih, LH; Hong, JW; Chang, CY |
| 國立交通大學 |
2014-12-08T15:46:59Z |
The effect of native oxide on epitaxial SiGe from deposited amorphous Ge on Si
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Wu, YH; Chen, WJ; Chin, A; Tsai, C |
| 國立交通大學 |
2014-12-08T15:46:38Z |
Improved electrical characteristics of CoSi2 using HF-vapor pretreatment
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Wu, YH; Chen, WJ; Chang, SL; Chin, A; Gwo, S; Tsai, C |
| 國立交通大學 |
2014-12-08T15:46:25Z |
Improved electrical characteristics of CoSi2 using HF-vapor pretreatment
|
Wu, YH; Chen, WJ; Chang, SL; Chin, A; Gwo, S; Tsai, C |
| 國立交通大學 |
2014-12-08T15:45:36Z |
Gate oxide integrity of thermal oxide grown on high temperature formed Si0.3Ge0.7
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Wu, YH; Chin, A |
| 國立交通大學 |
2014-12-08T15:45:20Z |
High-quality thermal oxide grown on high-temperature-formed SiGe
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Wu, YH; Chen, SB; Chin, A; Chen, WJ |
| 國立交通大學 |
2014-12-08T15:45:14Z |
Thickness dependent gate oxide quality of thin thermal oxide grown on high temperature formed SiGe
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Wu, YH; Chin, A; Chen, WJ |
| 國立交通大學 |
2014-12-08T15:45:09Z |
The buried oxide properties in oxygen plasma-enhanced low-temperature wafer bonding
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Wu, YH; Huang, CH; Chen, WJ; Lin, CN; Chin, A |
| 國立交通大學 |
2014-12-08T15:45:06Z |
Electrical characteristics of high quality La2O3 gate dielectric with equivalent oxide thickness of 5 angstrom
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Wu, YH; Yang, MY; Chin, A; Chen, WJ; Kwei, CM |
| 國立交通大學 |
2014-12-08T15:45:06Z |
High temperature formed SiGeP-MOSFET's with good device characteristics
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Wu, YH; Chin, A |
| 國立交通大學 |
2014-12-08T15:44:51Z |
Fabrication of very high resistivity Si with low loss and cross talk
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Wu, YH; Chin, A; Shih, KH; Wu, CC; Liao, CP; Pai, SC; Chi, CC |
| 國立交通大學 |
2014-12-08T15:44:42Z |
The effect of copper on gate oxide integrity
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Lin, YH; Wu, YH; Chin, A; Pan, FM |
| 國立交通大學 |
2014-12-08T15:43:56Z |
Characteristics of fluorinated amorphous carbon films and implementation of 0.15 mu m Cu/a-C : F damascene interconnection
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Shieh, JM; Suen, SC; Tsai, KC; Dai, BT; Wu, YC; Wu, YH |
| 國立交通大學 |
2014-12-08T15:42:15Z |
Reduction of etching plasma damage on low dielectric constant fluorinated amorphous carbon films by multiple H-2 plasma treatment
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Shieh, JM; Tsai, KC; Dai, BT; Wu, YC; Wu, YH |
| 國立交通大學 |
2014-12-08T15:27:03Z |
Rf loss and cross talk on extremely high resistivity (10K-1M Omega-cm) Si fabricated by ion implantation
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Wu, YH; Chin, A; Shih, KH; Wu, CC; Liao, CP; Pai, SC; Chi, CC |
| 國立交通大學 |
2014-12-08T15:27:03Z |
The performance limiting factors as RF MOSFETs scaling down
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Wu, YH; Chin, A; Liang, CS; Wu, CC |
| 國立交通大學 |
2014-12-08T15:27:03Z |
High quality La2O3 and Al2O3 gate dielectrics with equivalent oxide thickness 5-10 angstrom
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Chin, A; Wu, YH; Chen, SB; Liao, CC; Chen, WJ |
| 國立交通大學 |
2014-12-08T15:20:27Z |
The market size of a city-pair route at an airport
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Hsu, CI; Wu, YH |
Showing items 46-70 of 116 (5 Page(s) Totally)
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