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机构 日期 题名 作者
臺大學術典藏 2018-09-10T07:28:07Z Gas-assisted focused-ion-beam lithography of a diamond (100) surface Datta, A; Wu, YR; Wang, YL; YUH-RENN WU
臺大學術典藏 2018-09-10T07:28:06Z Study of polarization properties of light emitted from a-plane InGaN/GaN quantum well-based light emitting diodes Huang, HH;Wu, YR; Huang, HH; Wu, YR; YUH-RENN WU
臺大學術典藏 2018-09-10T07:28:06Z Size-Dependent Strain Relaxation and Optical Characteristics of InGaN/GaN Nanorod LEDs Wu, YR;Chiu, CH;Chang, CY;Yu, PC;Kuo, HC; Wu, YR; Chiu, CH; Chang, CY; Yu, PC; Kuo, HC; YUH-RENN WU
臺大學術典藏 2018-09-10T07:28:06Z Electronic and optical properties of InGaN quantum dot based light emitters for solid state lighting Wu, YR;Lin, YY;Huang, HH;Singh, J; Wu, YR; Lin, YY; Huang, HH; Singh, J; YUH-RENN WU
臺大學術典藏 2018-09-10T06:56:01Z Effect of image charges in the drain delay of AlGaN/GaN high electron mobility transistors Chung, JW; Zhao, X; Wu, YR; Singh, J; Palacios, T; YUH-RENN WU
臺大學術典藏 2018-09-10T06:56:00Z Strain relaxation induced microphotoluminescence characteristics of a single InGaN-based nanopillar fabricated by focused ion beam milling Chiu, CH; Wu, YR; Yen, HH; Chen, JR; Kao, CC; Yang, HW; Kuo, HC; Lu, TC; Yeh, WY; Wang, SC; Yu, PC; YUH-RENN WUet al.
臺大學術典藏 2018-09-10T06:21:43Z Capacitance-voltage characteristics of BiFeO3/SrTiO3/GaN heteroepitaxial structures Yang, SY; Zhan, Q; Yang, PL; Cruz, MP; Chu, YH; Ramesh, R; Wu, YR; Singh, J; Tian, W; Schlom, DG; YUH-RENN WU
臺大學術典藏 2018-09-10T06:21:42Z Transient study of self-heating effects in AlGaN/GaN HFETs: Consequence of carrier velocities, temperature, and device performance Wu, YR; Singh, J; YUH-RENN WU
臺大學術典藏 2018-09-10T05:51:42Z Device scaling physics and channel velocities in AlGaN/GaN HFETs: Velocities and effective gate length Wu, YR; Singh, M; Singh, J; YUH-RENN WU
臺大學術典藏 2018-09-10T05:16:49Z Velocity overshoot effects and scaling issues in III-V nitrides Singh, M; Wu, YR; Singh, JP; YUH-RENN WU

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