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显示项目 11-20 / 38 (共4页)
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机构 日期 题名 作者
國立交通大學 2014-12-08T15:25:22Z Quantum Confinement Effect in Short-Channel Gate-All-Around MOSFETs and Its Impact on the Sensitivity of Threshold Voltage to Process Variations Wu, Yu-Sheng; Su, Pin
國立交通大學 2014-12-08T15:25:21Z Investigation of Static Noise Margin of FinFET SRAM Cells in Sub-threshold Region Fan, Ming-Long; Wu, Yu-Sheng; Hu, Vita Pi-Ho; Su, Pin; Chuang, Ching-Te
國立交通大學 2014-12-08T15:24:25Z Investigation of Static Noise Margin of Ultra-Thin-Body SOI SRAM Cells in Subthreshold Region using Analytical Solution of Poisson's Equation Hu, Vita Pi-Ho; Wu, Yu-Sheng; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te
國立交通大學 2014-12-08T15:23:32Z Impact of Quantum Confinement on Backgate-Bias Modulated Threshold-Voltage and Subthreshold Characteristics for Ultra-Thin-Body GeOI MOSFETs Yu, Chang-Hung; Wu, Yu-Sheng; Hu, Vita Pi-Ho; Su, Pin
國立交通大學 2014-12-08T15:22:22Z Impact of Quantum Confinement on Subthreshold Swing and Electrostatic Integrity of Ultra-Thin-Body GeOI and InGaAs-OI n-MOSFETs Yu, Chang-Hung; Wu, Yu-Sheng; Hu, Vita Pi-Ho; Su, Pin
國立交通大學 2014-12-08T15:21:54Z A Closed-Form Quantum "Dark Space" Model for Predicting the Electrostatic Integrity of Germanium MOSFETs With High-k Gate Dielectric Wu, Yu-Sheng; Su, Pin
國立交通大學 2014-12-08T15:19:54Z Design and Analysis of Ultra-Thin-Body SOI Based Subthreshold SRAM Hu, Vita Pi-Ho; Wu, Yu-Sheng; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te
國立交通大學 2014-12-08T15:16:47Z Investigation of scaling for multi-gate MOSFETs using analytical solution of 3-D Poisson's equation Wu, Yu-Sheng; Su, Pin
國立交通大學 2014-12-08T15:12:24Z Investigation of random dopant fluctuation for multi-gate metal-oxide-semiconductor field-effect transistors using analytical solutions of three-dimensional Poisson's equation Wu, Yu-Sheng; Su, Pin
國立交通大學 2014-12-08T15:12:12Z Sensitivity of multigate MOSFETs to process variations - An assessment based on analytical solutions of 3-D Poisson's equation Wu, Yu-Sheng; Su, Pin

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