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教育部委託研究計畫      計畫執行:國立臺灣大學圖書館
 
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機構 日期 題名 作者
國立臺灣大學 2010 The Effect of Substrate Dissolution in Brazing CP-Ti and Ti-15-3 Using Clad Ti-15Cu-15Ni Filler Wu, Z.Y.; Yeh, T.Y.; Shiue, R.K.; Chang, C.S.
國立臺灣大學 2007 Infrared vacuum brazing of Ti?6Al?4V and Nb using the Ti?15Cu?15Ni foil Liaw, D. W.; Wu, Z. Y.; Shiue, R. K.; Chang, C. S.
國立臺灣大學 2007 Microstructural Analysis of Infrared Brazed Ti?6Al?4V and Nb Using the Ti?15Cu?25Ni Foil Liaw, D. W.; Wu, Z. Y.; Shiue, R. K.; Chang, C. S.
國立臺灣大學 2007 A novel ID-based threshold ring signature scheme competent for anonymity and anti-forgery Chung, Y. F.; Wu, Z. Y.; Lai, F. P.; Chen, T. S.
國立臺灣大學 2006 Anonymous signcryption in ring signature scheme over elliptic curve cryptosystem Chung, Y. F.; Wu, Z. Y.; Lai, F. P.; Chen, T. S.
國立臺灣大學 2001 Hydrodynamic computation of tidal estuary – Yanshui River as an example Wu, Z.Y.; Huang, L.H.; Teng, C.M.
國立臺灣大學 1995 Improvement in Reliability of n-MOSFETs by Using Rapid Thermal N20- Reoxidized Gate Oxides 胡振國; Wu, Y. L.; Wu, Z. Y.; Hwu, Jenn-Gwo; Wu, Y. L.; Wu, Z. Y.
國立臺灣大學 1993 Improved Performance of n-MOSFET's with Reoxidized Nitrided Oxide (RNO) by Using N20 as the Reoxidizer 胡振國; Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Z. Y.; Wu, Y. L.
國立臺灣大學 1993 Improved Performance of n-MOSFET's with Reoxidized Nitrided Oxide (RNO) by Using N20 as the Reoxidizer 胡振國; Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Z. Y.; Wu, Y. L.
臺大學術典藏 1993 Improved Performance of n-MOSFET's with Reoxidized Nitrided Oxide (RNO) by Using N20 as the Reoxidizer Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Z. Y.; 胡振國; Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Z. Y.
臺大學術典藏 1993 Improved Performance of n-MOSFET's with Reoxidized Nitrided Oxide (RNO) by Using N20 as the Reoxidizer Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo; 胡振國; Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.

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