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Showing items 1-20 of 20 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:46:32Z |
Effects of BF2+ implantation on the oxidation resistance of copper films
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Wu, ZC; Liu, YL; Chen, MC |
| 國立交通大學 |
2014-12-08T15:46:06Z |
Electrical reliability issues of integrating thin Ta and TaN barriers with Cu and low-K dielectric
|
Wu, ZC; Wang, CC; Wu, RG; Liu, YL; Chen, PS; Zhu, ZM; Chen, MC; Chen, JF; Chang, CI; Chen, LJ |
| 國立交通大學 |
2014-12-08T15:45:47Z |
Passivation of copper films with magnesium doping using recoil ion implantation
|
Wu, ZC; Liu, YL; Chen, MC |
| 國立交通大學 |
2014-12-08T15:43:49Z |
Dielectric and barrier properties of spin-on organic aromatic low dielectric constant polymers FLARE and SiLK
|
Wu, ZC; Shiung, ZW; Wu, RG; Liu, YL; Wu, WH; Tsui, BY; Chen, MC; Chang, W; Chou, PF; Jang, SM; Hu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:43:49Z |
Physical and electrical characteristics of F- and C-doped low dielectric constant chemical vapor deposited oxides
|
Wu, ZC; Shiung, ZW; Chiang, CC; Wu, WH; Chen, MC; Jeng, SM; Chang, W; Chou, PF; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:43:48Z |
Leakage mechanism in Cu damascene structure with methylsilane-doped low-K CVD oxide as intermetal dielectric
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Wu, ZC; Chiang, CC; Wu, WH; Chen, MC; Jeng, SM; Li, LJ; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:43:48Z |
Physical and electrical characteristics of methylsilane- and trimethylsilane-doped low dielectric constant chemical vapor deposited oxides
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Wu, ZC; Shiung, ZW; Chiang, CC; Wu, WH; Chen, MC; Jeng, SM; Chang, W; Chou, PF; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:40:39Z |
Physical and barrier properties of plasma-enhanced chemical vapor deposited alpha-SiC : H films from trimethylsilane and tetramethylsilane
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Chiang, CC; Chen, MC; Ko, CC; Wu, ZC; Jang, SM; Liang, MS |
| 國立交通大學 |
2014-12-08T15:40:39Z |
Physical and barrier properties of plasma enhanced chemical vapor deposition alpha-SiC : N : H films
|
Chiang, CC; Wu, ZC; Wu, WH; Chen, MC; Ko, CC; Chen, HP; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:39:57Z |
Improvement in leakage current and breakdown field of Cu-comb capacitor using a silicon oxycarbide dielectric barrier
|
Chiang, CC; Ko, IH; Chen, MC; Wu, ZC; Lu, YC; Jang, SM; Liang, MS |
| 國立交通大學 |
2014-12-08T15:39:57Z |
Physical and barrier properties of PECVD amorphous silicon-oxycarbide from trimethylsilane and CO2
|
Chiang, CC; Ko, IH; Chen, MC; Wu, ZC; Lu, YC; Jang, SM; Liang, MS |
| 國立交通大學 |
2014-12-08T15:39:52Z |
Physical and barrier properties of amorphous silicon-oxycarbide deposited by PECVD from octamethylcyclotetrasiloxane
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Chiang, CC; Chen, CC; Li, LJ; Wu, ZC; Jang, SM; Liang, MS |
| 國立交通大學 |
2014-12-08T15:39:42Z |
Leakage and breakdown mechanisms of Cu comb capacitors with bilayer-structured alpha-SiCN/alpha-SiC Cu-cap barriers
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Chiang, CC; Ko, IH; Chen, MC; Wu, ZC; Lu, YC; Jang, SM; Liang, MS |
| 國立交通大學 |
2014-12-08T15:39:40Z |
TDDB reliability improvement of Cu damascene with a bilayer-structured alpha-SiC : H dielectric barrier
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Chiang, CC; Chen, MC; Wu, ZC; Li, LJ; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:37:21Z |
Effects of O-2- and N-2-plasma treatments on copper surface
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Chiang, CC; Chen, MC; Li, LJ; Wu, ZC; Jang, SM; Liang, MS |
| 國立交通大學 |
2014-12-08T15:27:01Z |
Electrical reliability issues of integrating low-K dielectrics with Cu metallization
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Wu, ZC; Shiung, ZW; Wang, CC; Fang, KL; Wu, RG; Liu, YL; Tsui, BY; Chen, MC; Chang, W; Chou, PF; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:26:48Z |
Comparative study of physical and electrical characteristics of F- and C-doped low-K CVD oxides
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Wu, ZC; Shiung, ZW; Chiang, CC; Wu, WH; Chen, MC; Jeng, SM; Chang, W; Chou, PF; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:26:48Z |
Barrier characteristics of PECVD alpha-SiC : H dielectrics
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Chiang, CC; Wu, ZC; Wu, WH; Chen, MC; Ko, CC; Chen, HP; Jeng, SM; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:26:29Z |
TDDB reliability improvement in Cu damascene by using a bilayer-structured PECVD SiC dielectric barrier
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Chiang, CC; Chen, MC; Wu, ZC; Li, LJ; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:26:16Z |
Leakage and breakdown mechanisms in cu damascene with a bilayer-structured a-SiCN/a-SiC dielectric barrier
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Chiang, CC; Ko, IH; Chen, MC; Wu, ZC; Lu, YC; Jang, SM; Liang, MS |
Showing items 1-20 of 20 (1 Page(s) Totally)
1
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