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Taiwan Academic Institutional Repository >
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"wu zc"
Showing items 11-20 of 20 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:39:57Z |
Physical and barrier properties of PECVD amorphous silicon-oxycarbide from trimethylsilane and CO2
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Chiang, CC; Ko, IH; Chen, MC; Wu, ZC; Lu, YC; Jang, SM; Liang, MS |
| 國立交通大學 |
2014-12-08T15:39:52Z |
Physical and barrier properties of amorphous silicon-oxycarbide deposited by PECVD from octamethylcyclotetrasiloxane
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Chiang, CC; Chen, CC; Li, LJ; Wu, ZC; Jang, SM; Liang, MS |
| 國立交通大學 |
2014-12-08T15:39:42Z |
Leakage and breakdown mechanisms of Cu comb capacitors with bilayer-structured alpha-SiCN/alpha-SiC Cu-cap barriers
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Chiang, CC; Ko, IH; Chen, MC; Wu, ZC; Lu, YC; Jang, SM; Liang, MS |
| 國立交通大學 |
2014-12-08T15:39:40Z |
TDDB reliability improvement of Cu damascene with a bilayer-structured alpha-SiC : H dielectric barrier
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Chiang, CC; Chen, MC; Wu, ZC; Li, LJ; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:37:21Z |
Effects of O-2- and N-2-plasma treatments on copper surface
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Chiang, CC; Chen, MC; Li, LJ; Wu, ZC; Jang, SM; Liang, MS |
| 國立交通大學 |
2014-12-08T15:27:01Z |
Electrical reliability issues of integrating low-K dielectrics with Cu metallization
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Wu, ZC; Shiung, ZW; Wang, CC; Fang, KL; Wu, RG; Liu, YL; Tsui, BY; Chen, MC; Chang, W; Chou, PF; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:26:48Z |
Comparative study of physical and electrical characteristics of F- and C-doped low-K CVD oxides
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Wu, ZC; Shiung, ZW; Chiang, CC; Wu, WH; Chen, MC; Jeng, SM; Chang, W; Chou, PF; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:26:48Z |
Barrier characteristics of PECVD alpha-SiC : H dielectrics
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Chiang, CC; Wu, ZC; Wu, WH; Chen, MC; Ko, CC; Chen, HP; Jeng, SM; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:26:29Z |
TDDB reliability improvement in Cu damascene by using a bilayer-structured PECVD SiC dielectric barrier
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Chiang, CC; Chen, MC; Wu, ZC; Li, LJ; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:26:16Z |
Leakage and breakdown mechanisms in cu damascene with a bilayer-structured a-SiCN/a-SiC dielectric barrier
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Chiang, CC; Ko, IH; Chen, MC; Wu, ZC; Lu, YC; Jang, SM; Liang, MS |
Showing items 11-20 of 20 (1 Page(s) Totally)
1
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