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Showing items 1-7 of 7 (1 Page(s) Totally)
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| 國立臺灣科技大學 |
2015 |
Effects of copper excess and copper deficiency on the structural and electrical properties of bulk CuxSnSe3 with x=1.6-2.2
|
Wubet, W.;Kuo, D.-H. |
| 國立臺灣科技大學 |
2015 |
Structural and electrical properties of Si- and Ti-doped Cu2SnSe3 bulks
|
Wubet, W.;Kuo, D.-H. |
| 國立臺灣科技大學 |
2015 |
Effects of sintering temperature and duration on the structural and electrical properties of CuBiS2 bulks
|
Wubet, W.;Kuo, D.-H.;Abdullah, H. |
| 國立臺灣科技大學 |
2014 |
Improvements in electrical properties for the Sn-rich Cu2- xZnSnSe4 bulks with mobility above 50 cm2/V s
|
Kuo, D.-H.;Wubet, W. |
| 國立臺灣科技大學 |
2014 |
Process limitation for p-type CuSbS2 semiconductor with high electrical mobility of 20 cm2 V-1 s-1
|
Wubet, W.;Kuo, D.-H. |
| 國立臺灣科技大學 |
2014 |
Mg dopant in Cu2ZnSnSe4: An n-type former and a promoter of electrical mobility up to 120 cm2 V-1 s -1
|
Kuo, D.-H.;Wubet, W. |
| 國立臺灣科技大學 |
2014 |
Mg dopant in Cu2SnSe3: An n-type former and a promoter of electrical mobility up to 387 cm2 V-1 s -1
|
Kuo, D.-H.;Wubet, W. |
Showing items 1-7 of 7 (1 Page(s) Totally)
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