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Showing items 1-4 of 4 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:15:07Z |
Schottky barrier height for the photo leakage current transformation of a-Si : H TFTs
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Wang, M. C.; Chang, T. C.; Liu, Po-Tsun; Li, Y. Y.; Xiao, R. W.; Lin, L. F.; Chen, J. R. |
| 國立交通大學 |
2014-12-08T15:15:07Z |
Cu/CuMg gate electrode for the application of hydrogenated amorphous silicon thin-film transistors
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Wang, M. C.; Chang, T.-C.; Liu, Po-Tsun; Li, Y. Y.; Xiao, R. W.; Lin, L. F.; Chen, J. R. |
| 國立交通大學 |
2014-12-08T15:13:40Z |
n(+)-doped-layer-free microcrystalline silicon thin film transistors fabricated with the CuMg as source/drain metal
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Wang, M. C.; Chang, T. C.; Liu, Po-Tsun; Xiao, R. W.; Lin, L. F.; Li, Y. Y.; Yeh, F. S.; Chen, J. R. |
| 國立交通大學 |
2014-12-08T15:13:32Z |
Suppression of Schottky leakage current in island-in amorphous silicon thin film transistors with the Cu/CuMg as source/drain metal
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Wang, M. C.; Chang, T. C.; Liu, Po-Tsun; Xiao, R. W.; Lin, L. F.; Li, Y. Y.; Huang, F. S.; Chen, J. R. |
Showing items 1-4 of 4 (1 Page(s) Totally)
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