|
"xuan rong"的相關文件
顯示項目 1-21 / 21 (共1頁) 1 每頁顯示[10|25|50]項目
| 國立交通大學 |
2017-04-21T06:49:09Z |
P-substrate small-aperture holey light-emitting diodes for fiber-optic applications
|
Yang, Hung-Pin D.; Liu, Jui-Nung; Lai, Fang-, I; Kuo, Hao-Chung; Xuan, Rong; Chi, Jim Y. |
| 國立交通大學 |
2014-12-08T15:32:06Z |
Reduction of Efficiency Droop in InGaN Light-Emitting Diode Grown on Self-Separated Freestanding GaN Substrates
|
Chao, Chu-Li; Xuan, Rong; Yen, Hsi-Hsuan; Chiu, Ching-Hsueh; Fang, Yen-Hsiang; Li, Zhen-Yu; Chen, Bo-Chun; Lin, Chien-Chung; Chiu, Ching-Hua; Guo, Yih-Der; Kuo, Hao-Chung; Chen, Jenn-Fang; Cheng, Shun-Jen |
| 國立交通大學 |
2014-12-08T15:31:58Z |
Hole Injection and Electron Overflow Improvement in 365 nm Light-Emitting Diodes by Band-Engineering Electron Blocking Layer
|
Fu, Yi-Keng; Lu, Yu-Hsuan; Xuan, Rong; Chen, Jenn-Fang; Su, Yan-Kuin |
| 國立交通大學 |
2014-12-08T15:29:25Z |
Effect of AlInGaN barrier layers with various TMGa flows on optoelectronic characteristics of near UV light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy
|
Fu, Yi-Keng; Lu, Yu-Hsuan; Jiang, Ren-Hao; Chen, Bo-Chun; Fang, Yen-Hsiang; Xuan, Rong; Su, Yan-Kuin; Lin, Chia-Feng; Chen, Jebb-Fang |
| 國立交通大學 |
2014-12-08T15:28:19Z |
Enhancing threshold voltage of AlGaN/GaN high electron mobility transistors by nano rod structure: From depletion mode to enhancement mode
|
Xuan, Rong; Kuo, Wei-Hong; Hu, Chih-Wei; Lin, Suh-Fang; Chen, Jenn-Fang |
| 國立交通大學 |
2014-12-08T15:26:40Z |
Study of InGaN-Based Light-Emitting Diodes on a Roughened Backside GaN Substrate by a Chemical Wet-Etching Process
|
Fu, Yi-Keng; Chen, Bo-Chun; Fang, Yen-Hsiang; Jiang, Ren-Hao; Lu, Yu-Hsuan; Xuan, Rong; Huang, Kai-Feng; Lin, Chia-Feng; Su, Yan-Kuin; Chen, Jebb-Fang; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:22:44Z |
High efficiency and output power of near-ultraviolet light-emitting diodes grown on GaN substrate with back-side etching
|
Fang, Yen-Hsiang; Fu, Yi-Keng; Xuan, Rong |
| 國立交通大學 |
2014-12-08T15:21:51Z |
Optical Simulation and Fabrication of Near-Ultraviolet LEDs on a Roughened Backside GaN Substrate
|
Fu, Yi-Keng; Lu, Yu-Hsuan; Xuan, Rong; Chao, Chia-Hsin; Su, Yan-Kuin; Chen, Jenn-Fang |
| 國立交通大學 |
2014-12-08T15:13:52Z |
The Fabrication of Laser Array by Holographic Interference Lithography
|
Chao, Chuli; Ni, Chi-Yu; Xuan, Rong; Kuo, Hao-Chung |
| 國立交通大學 |
2014-12-08T15:11:54Z |
The effect of trimethylgallium flows in the AIInGaN barrier on optoelectronic characteristics of near ultraviolet light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy
|
Fu, Yi-Keng; Jiang, Ren-Hao; Lu, Yu-Hsuan; Chen, Bo-Chun; Xuan, Rong; Fang, Yen-Hsiang; Lin, Chia-Feng; Su, Yan-Kuin; Chen, Jenn-Fang |
| 國立成功大學 |
2013-08 |
Light Improvement of Near Ultraviolet Light-Emitting Diodes by Utilizing Lattice-Matched InAlGaN as Barrier Layers in Active Region
|
Lu, Yu-Hsuan; Fu, Yi-Keng; Huang, Shyh-Jer; Su, Yan-Kuin; Xuan, Rong; Pilkuhn, Manfred H.; Chen, Ying-Chih |
| 國立成功大學 |
2013-08 |
Suppression of Nonradiation Recombination by Selected Si Doping in AlGaN Barriers for Ultraviolet Light-Emitting Diodes
|
Lu, Yu-Hsuan; Fu, Yi-Keng; Huang, Shyh-Jer; Su, Yan-Kuin; Chen, Ying-Chih; Xuan, Rong; Pilkuhn, Manfred H. |
| 國立成功大學 |
2013-08 |
Hole Injection and Electron Overflow Improvement in 365 nm Light-Emitting Diodes by Band-Engineering Electron Blocking Layer
|
Fu, Yi-Keng; Lu, Yu-Hsuan; Xuan, Rong; Chen, Jenn-Fang; Su, Yan-Kuin |
| 國立成功大學 |
2013-04-08 |
Efficiency enhancement in ultraviolet light-emitting diodes by manipulating polarization effect in electron blocking layer
|
Lu, Yu-Hsuan; Fu, Yi-Keng; Huang, Shyh-Jer; Su, Yan-Kuin; Xuan, Rong; Pilkuhn, Manfred H. |
| 國立成功大學 |
2013-01 |
Effect of AlGaN Si-Doped Barrier Layer on Optical Properties of Ultraviolet Light-Emitting Diodes
|
Lu, Yu-Hsuan; Fu, Yi-Keng; Huang, Shyh-Jer; Su, Yan-Kuin; Xuan, Rong; Pilkuhn, Manfred H. |
| 國立成功大學 |
2012-05-15 |
Optical Simulation and Fabrication of Near-Ultraviolet LEDs on a Roughened Backside GaN Substrate
|
Fu, Yi-Keng; Lu, Yu-Hsuan; Xuan, Rong; Chao, Chia-Hsin; Su, Yan-Kuin; Chen, Jenn-Fang |
| 國立成功大學 |
2011-12-29 |
Nitride semiconductor light emitting device with magnetic film
|
HSU, CHIH-HAO;XUAN, RONG;CHANG, YU-HSIANG;HUANG, JUNG-CHUN;CHEN, CHUN-YING |
| 國立成功大學 |
2011-10 |
Study of InGaN-Based Light-Emitting Diodes on a Roughened Backside GaN Substrate by a Chemical Wet-Etching Process
|
Fu, Yi-Keng; Chen, Bo-Chun; Fang, Yen-Hsiang; Jiang, Ren-Hao; Lu, Yu-Hsuan; Xuan, Rong; Huang, Kai-Feng; Lin, Chia-Feng; Su, Yan-Kuin; Chen, Jebb-Fang; Chang, Chun-Yen |
| 國立成功大學 |
2011-08 |
Effect of AlInGaN barrier layers with various TMGa flows on optoelectronic characteristics of near UV light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy
|
Fu, Yi-Keng; Lu, Yu-Hsuan; Jiang, Ren-Hao; Chen, Bo-Chun; Fang, Yen-Hsiang; Xuan, Rong; Su, Yan-Kuin; Lin, Chia-Feng; Chen, Jebb-Fang |
| 國立成功大學 |
2011-03-21 |
The effect of trimethylgallium flows in the AIInGaN barrier on optoelectronic characteristics of near ultraviolet light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy
|
Fu, Yi-Keng; Jiang, Ren-Hao; Lu, Yu-Hsuan; Chen, Bo-Chun; Xuan, Rong; Fang, Yen-Hsiang; Lin, Chia-Feng; Su, Yan-Kuin; Chen, Jenn-Fang |
| 國立東華大學 |
2008 |
Relative Intensity Noise Characteristics of Long-Wavelength Quantum Dot Vertical-Cavity Surface-Emitting Lasers
|
祁錦雲; Jim-Yong Chi;Peng Peng-Chun; Yeh Chao-En; Kuo Hao-Chung; Xuan Rong; Lin Chun-Ting; Lin Gray; Chi Sien |
顯示項目 1-21 / 21 (共1頁) 1 每頁顯示[10|25|50]項目
|