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Taiwan Academic Institutional Repository >
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"y c chin"
Showing items 1-10 of 15 (2 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T15:00:11Z |
Bond distortion in GaPSb alloys studied by reciprocal space mapping and extended X-ray absorption fine structure
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C. Y. Tsai;M. C. Liu;Y. C. Chin;Z. C. Feng;H. H. Lin; C. Y. Tsai; M. C. Liu; Y. C. Chin; Z. C. Feng; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T15:00:10Z |
Temperature dependence study of near-band-edge transitions of compressively strained quaternary GaAsPSb layer by photoreflectance and piezoreflectance spectroscopy
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H. P. Hsu,;P. H. Wu,;J. Y. Chen,;B. H. Chen,;Y. S. Huang,;Y. C. Chin,;H. H. Lin,;K. K. Tiong,; H. P. Hsu,; P. H. Wu,; J. Y. Chen,; B. H. Chen,; Y. S. Huang,; Y. C. Chin,; H. H. Lin,; K. K. Tiong,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T09:50:19Z |
Raman spectroscopy of GaAsPSb alloys
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C. Y. Tsai,;Y. C. Chin,;H. H. Lin,; C. Y. Tsai,; Y. C. Chin,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T09:50:18Z |
GaAsPSb and its application to heterojunction bipolar transistors
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Y. C. Chin,;H. H. Lin,;H. S. Guo,;C. H. Huang,; Y. C. Chin,; H. H. Lin,; H. S. Guo,; C. H. Huang,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T09:50:18Z |
Photoluminescence characterization of GaAs/GaAs0.64P0.19Sb0.17/GaAs heterostructure
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Y. C. Chin,; H. S. Tsai,; H. H. Lin,; HAO-HSIUNG LIN; J. Y. Chen,;B. H. Chen,;Y. S. Huang,;Y. C. Chin,;H. S. Tsai,;H. H. Lin,; J. Y. Chen,; B. H. Chen,; Y. S. Huang, |
| 臺大學術典藏 |
2018-09-10T09:24:39Z |
InGaP/GaAs0.57P0.28Sb0.15/GaAs double HBT with weakly type-II base/collector junction
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Y. C. Chin,;H. H. Lin,;C. H. Huang,;M. N. Tseng,; Y. C. Chin,; H. H. Lin,; C. H. Huang,; M. N. Tseng,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T09:24:39Z |
Electron transport in a GaPSb film
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S. T. Lo; H. E. Lin; S.-W. Wang; H. D. Lin; Y. C. Chin; H. H. Lin; J. C. Lin; C. T. Liang; S. T. Lo; H. E. Lin; S.-W. Wang; H. D. Lin; Y. C. Chin; H. H. Lin; J. C. Lin; C. T. Liang; CHI-TE LIANG; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T09:24:39Z |
Electronic and structureal properties of GaAs0.64P0.19Sb0.17 on GaAs
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Y. C. Chin;J. Y. Chen;B. H. Chen;H. S. Tsai;Y. S. Huang;H. H. Lin; Y. C. Chin; J. Y. Chen; B. H. Chen; H. S. Tsai; Y. S. Huang; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:48Z |
In0.46Ga0.54P0.98Sb0.02/GaAs: Its band offset and application to heterojunction bipolar transistor
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Y. C. Chin,;H. H. Lin,;C. H. Huang,;M. N. Tseng,; Y. C. Chin,; H. H. Lin,; C. H. Huang,; M. N. Tseng,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:15Z |
Comparison of InGaPSb/GaAs and InGaP/GaAs HBTs grown by MOCVD
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Y. C. Chin;H. H. Lin;C. H. Huang;M. N. Tseng; Y. C. Chin; H. H. Lin; C. H. Huang; M. N. Tseng; HAO-HSIUNG LIN |
Showing items 1-10 of 15 (2 Page(s) Totally)
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