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Institution Date Title Author
臺大學術典藏 2018-09-10T03:50:03Z High power In0.49Ga0.51P/ In0.15Ga0.85As heterostructure doped-channel FETs H. C. Chiu; S. C. Yang; Y. J. Chan; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T03:50:03Z (AlxGa1-x)0.5In0.5P/ In0.15Ga0.85As (x=0, 0.3, 1.0) heterostructure doped-channel FETs for microwave power applications S. C. Yang; H. C. Chiu; Y.-J. Chan; H. H. Lin; J.-M. Kuo; HAO-HSIUNG LIN

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