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Showing items 121-125 of 125  (5 Page(s) Totally)
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Institution Date Title Author
國立中山大學 1982 Two Region Associated with Transverse Field Characteristic Model of GaAs MESFET M.K. Lee;C.Y. Chang;Y.K. Su
國立中山大學 1982 A Method for Growing Sn-doped Gays Epilayers by Low Pressure MOCVD C.Y. Chang;M.K. Lee;Y.K. Su;T.S. Wu
國立中山大學 1981 Characterization of GaAs Epitaxial Layers by Low Pressure MOVPE Using TEG as Ga Source C.Y. Chang; Y.K. Su; M.K. Lee; M.P. Houng
國立中山大學 1981 Growth and Properties of GaP/Si Device by MOCVD Y.K. Su;C.Y. Chang;T.S. Wu;M.K. Lee;M.P. Houng;L.G. Chen
國立中山大學 1981 Properties of Sn-doped GaAs Epitaxial Layers by Low Pressure MOCVD M.K. Lee;C.Y. Chang;Y.K. Su

Showing items 121-125 of 125  (5 Page(s) Totally)
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