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Showing items 101-110 of 125  (13 Page(s) Totally)
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Institution Date Title Author
國立高雄師範大學 1992 The Current-Voltage Characteristics of a Delta-Doped Triple-Barrier Switch Ruey-Lue Wang;Y. K. Su;C. H. Su;H.H. Tsai; 王瑞祿
國立高雄師範大學 1992 The Switching Characteristics in Sawtooth Type Superlattice with Asymmetric Doping Ruey-Lue Wang;H. H. Tsai;Y. K. Su; 王瑞祿
國立高雄師範大學 1992 Delta-Doped Layer and Related Interband Tunnelin Giode by MOCVD Ruey-Lue Wang;Y. K. Su;H. H. Tsai;C.H. Su; 王瑞祿
國立高雄師範大學 1992 GaAs Negative Differential Resistance Devices Ruey-Lue Wang;Y. K. Su;H. H. Tsai; 王瑞祿
國立高雄師範大學 1992 Delta-Doped Triple-Barrier Switching Device Ruey-Lue Wang;T. S. Wu;Y. K. Su;H. H. Tsai; 王瑞祿
國立高雄師範大學 1991 Negative Differential Resistance in GaAs Delta-Doping Tunneling Diodes Ruey-Lue Wang;Y. K. Su;Y. H. Wang; 王瑞祿
國立臺灣海洋大學 1991 A Study of the Growth Rate of ZnSe Epilayer on GaAs Substrate Using Vapor Phase Epitaxy C.C.Chang; Y.K.Su; C.C.Wei; S.S.Chou; S.H.Yang; F.L.Hsu
國立高雄師範大學 1990-06 A Novel Negative Differential Resistance in Delta-Doping Induced Homojunction Double Barrier Quantum Well Diode Ruey-Lue Wang;Y. K. Su;Y. H. Wang;K. F. Yarn; 王瑞祿
國立高雄師範大學 1990 Negative differential resistance of a delta-doping-induced double-barrier quantum-well diode at room temperature Ruey-Lue Wang;Y. K. Su;Y. H. Wang;K. F. Yarn; 王瑞祿
國立臺灣海洋大學 1989-12 The effect of growth time and thickness on the electrical properties of ZnSe epilayers on GaAs substrates Y. K. Su; C. C. Chang; C. C. Wei; F. J. Hwang

Showing items 101-110 of 125  (13 Page(s) Totally)
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