臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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Institution	Date	Title	Author
國立臺灣海洋大學	1988	Epitaxial Twin growth of ZnSe on Semi-Insulating ZnSe Substrate	C. C. Chang; C. C. Wei; Y.K.Su
國立臺灣海洋大學	1988	The Growth and Characterization of ZnSe Epilayers Grown by VPE and MOCVD	Y. K. Su; C.C.Wei; C. C. Chang
國立臺灣海洋大學	1987-07	Growth and Characterization of ZnSe Single Crystals by Closed Tube Method	C. C. Chang; C. C. Wei; Y. K. Su; H. C. Tzeng
國立臺灣海洋大學	1986	Surface Morphology and Properties of GaAs Epilayers Controlled by Temperature Difference Method of Liquid Phase Epitaxy	Y.K.Su; C.C.Wei; S.C.Lu; C.C.Chang
國立臺灣海洋大學	1986	Liquid Phase Epitaxy Growth of GaAs-Si by Temperature Difference Method	C.C.Wei; Y.K.Su; C.C.Chang; S.C.Lu
國立中山大學	1984	Growth Mechanisms of the GaAs LPMOCVD Growth	C.Y. Chang;M.K. Lee;Y.K. Su;Y.C. Chou;L.P. Chen
國立中山大學	1983	Enhancement of Growth Rate due to Tin Doping in GaAs Epilayer Grown by Low Pressure Metalorgarlic Chemical Vapor Deposition	M.K. Lee; C.Y. Chang; Y.K. Su; W.C. Hsu
國立中山大學	1983	Control of Silicon Dioxide Properties by RF Sputtering	M.K. Lee; C.Y. Chang; I.S. Tzeng; Y.K. Su
國立中山大學	1983	Investigation of Sn-doped GaAs Epilayers Grown by Low Pressure Metal-Organic Chemical Vapor Deposition	M.K. Lee; C.Y. Chang; Y.K. Su
國立中山大學	1982-10	Sn-doped GaAs Epilayers Grown by Low Pressure MOCVD	C.Y. Chang;M.K. Lee;Y.K. Su
國立中山大學	1982	Two Region Associated with Transverse Field Characteristic Model of GaAs MESFET	M.K. Lee;C.Y. Chang;Y.K. Su
國立中山大學	1982	A Method for Growing Sn-doped Gays Epilayers by Low Pressure MOCVD	C.Y. Chang;M.K. Lee;Y.K. Su;T.S. Wu
國立中山大學	1981	Characterization of GaAs Epitaxial Layers by Low Pressure MOVPE Using TEG as Ga Source	C.Y. Chang; Y.K. Su; M.K. Lee; M.P. Houng
國立中山大學	1981	Growth and Properties of GaP/Si Device by MOCVD	Y.K. Su;C.Y. Chang;T.S. Wu;M.K. Lee;M.P. Houng;L.G. Chen
國立中山大學	1981	Properties of Sn-doped GaAs Epitaxial Layers by Low Pressure MOCVD	M.K. Lee;C.Y. Chang;Y.K. Su

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