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Institution Date Title Author
南台科技大學 2002-12 Heteroepitaxial silicon-carbide nitride films with different carbon sources on silicon substrates prepared by rapid-thermal chemical-vapor deposition S. F. Ting; Y. K. Fang; W. T. Hsieh; Y. S. Tsair; C. N. Chang; C. S. Lin; M. C. Hsieh; H. C. Chiang; J. J. Ho;謝文哲
南台科技大學 2002-10 Improving High Temperature Characteristic of SiGeC/Si Heterojunction Diode with Propane Carbon Source W. T. Hsieh; Y. K. Fang; S. F. Ting; Y. S. Tsair; W. J. Lee; H. P. Wang;謝文哲
國立臺灣海洋大學 2002-08-07 A High Breakdown-Voltage SiCNSi Heterojunction Diode for High-Temperature Applications S.F. Ting; Y.K. Fang; W.T. Hsieh; Y.S. Tsair; C.N. Chang; C.S. Lin; M.C. Hsieh; H.C. Chiang; J.J. Ho
南台科技大學 2002-03 A High Breakdown-Voltage SiCN/Si Heterojunction Diode for High-Temperature Applications S. F. Ting; Y. K. Fang; W. T. Hsieh; Y. S. Tsair; C. N. Chang; C. S. Lin; M. C. Hsieh; H. C. Chiang; J. J. Ho;謝文哲
南台科技大學 2001-09 The Cubic Single-Crystalline Si1-x-yCxNy Films With Mirror Face Prepared By RTCVD S. F. Ting; Y. K. Fang; W. T. Hsieh; Y. S. Tsair; C. N. Chang; C. S. Lin; M. C. Hsieh; H. C. Chiang; J. J. Ho;謝文哲

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