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Institution	Date	Title	Author
臺大學術典藏	2018-09-10T09:24:39Z	Evidence of nitrogen reorganization in GaAsSbN alloys	H. P. Hsu;Y. T. Lin;H. H. Lin; H. P. Hsu; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T08:47:22Z	Clock-Gating-Aware Low Launch WSA Test Pattern Generation for At-Speed Scan Testing	Y.-T. Lin; J.-L. Huang; X. Wen; JIUN-LANG HUANG
臺大學術典藏	2018-09-10T08:46:01Z	Short range sturcure of GaAsSbN grown by plasma-assisted gas-source molecular-beam epitaxy	Y. T. Lin,; J. S. Wu,; Z. C. Feng,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T08:17:52Z	Hetero-epitaxy of InAs on patterened Si (100) substrates	Y. T. Lin;Y. R. Lin;C. H. Ko;C. H. Wann;H. H. Lin; Y. T. Lin; Y. R. Lin; C. H. Ko; C. H. Wann; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T08:17:50Z	Effects of plasma species on the N incorporation of GaAsSbN grown by plasma-assisted GSMBE	T. C. Ma;Y. T. Lin;H. H. Lin; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T08:17:49Z	Optical study of GaAs1-xSbx layers grown on GaAs substrates by gas-source molecular beam epitaxy	H. P. Hsu,;Y. S. Huang,;Y. T. Lin,;H. H. Lin,;K. K. Tiong,; H. P. Hsu,; Y. S. Huang,; Y. T. Lin,; H. H. Lin,; K. K. Tiong,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T08:17:49Z	Effects of different plasma species on the N incorporation of GaAsSbN grown by plasma-assisted GSMBE	T. C. Ma;Y. T. Lin;H. H. Lin; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T08:17:49Z	Low temperature annealing for GaAsSbN grown by gas-source molecular beam epitaxy	Y. T. Lin,;T. C. Ma,;H. H. Lin; Y. T. Lin,; T. C. Ma,; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:17Z	Nitrogen atomic rearrangement in thermally annealed GaAsSbN	Y. T. Lin,;T. C. Ma,;H. H. Lin,;J. D. Wu,;Y. S. Huang,; Y. T. Lin,; T. C. Ma,; H. H. Lin,; J. D. Wu,; Y. S. Huang,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:16Z	A comparative study of GaAsSbN epilayers grown by gas-source molecular-beam epitaxy with different plasma nitrogen species	Y. T. Lin;T. C. Ma;H. H. Lin; Y. T. Lin; T. C. Ma; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:14Z	Comparision of annealing effects on the electrical and optical properties of GaAsN, GaAsSb, and GaAsSbN	Y. T. Lin;T. C. Ma;S. P. Wang;H. H. Lin; Y. T. Lin; T. C. Ma; S. P. Wang; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:13Z	Effects of annealing on the electrical and optical properties of dilute nitride GaAsSbN	S. P. Wang;T. C. Ma;Y. T. Lin;H. H. Lin; S. P. Wang; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:12Z	Piezoreflectance and photoreflectance study of annealing effects on GaAs0.946Sb0.084 and GaAs0.906Sb0.075N0.019 films on GaAs grown by gas-source molecular beam epitaxy,	H. P. Hsu,;Y. N. Huang,;Y. S. Huang,;Y. T. Lin,;T. C. Ma,;H. H. Lin,;K. K. Tiong,;P. Sitarek,;J. Misiewicz,; H. P. Hsu,; Y. N. Huang,; Y. S. Huang,; Y. T. Lin,; T. C. Ma,; H. H. Lin,; K. K. Tiong,; P. Sitarek,; J. Misiewicz,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:09:28Z	PHS-Fill: A Low Power Supply Noise Test Pattern Generation Technique for At-Speed Testing in Huffman Coding Test Compression Environment	Y.-T. Lin;M.-F. Wu;J.-L. Huang; Y.-T. Lin; M.-F. Wu; J.-L. Huang; JIUN-LANG HUANG
臺大學術典藏	2018-09-10T07:08:02Z	Effect of annealing on the electrical and optical properties of dilute nitride GaAsSbN	S. P. Wang;T. C. Ma;Y. T. Lin;H. H. Lin; S. P. Wang; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:08:02Z	Band structure of dilute nitride GaAsSbN	Y. T. Lin;T. C. Ma;T. Y. Chen;H. H. Lin; Y. T. Lin; T. C. Ma; T. Y. Chen; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:08:01Z	Origin of the annealing-induced blue-shift in GaAsSbN	Y. T. Lin,; T. C. Ma,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:08:01Z	GaAsSbN/GaAs long wavelength PIN detectors	C. K. Chen,; T. C. Ma,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:08:01Z	Dilute nitride GaAsSbN grown by gas source molecular beam epitaxy	H. H. Lin; T. C. Ma; Y. T. Lin; C. K. Chen; T. Y. Chen; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:07:59Z	Incorporation behaviors of group V elements in GaAsSbN grown by gas source molecular beam epitaxy	T. C. Ma,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:46Z	Effect of thermal annealing on the optical properties of GaAsSbN	Y. T. Lin; T. C. Ma; T. Y. Chen; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:46Z	Origin of the annealing-induced blue-shift in GaAsSbN bulk layers	Y. T. Lin,; T. C. Ma,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:45Z	Temperature dependence of the energy gaps of GaAsSbN epilayers on GaAs substrates	T. C. Ma,; T. Y. Chen,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:45Z	Dilute nitride GaAs0.852Sb0.117N0.031/ GaAs PIN detector with a cut-off wavelength>1.5m	C. K. Chen; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:44Z	Incorporation behaviors of group V elements in GaAsSbN grown by gas source molecular beam epitaxy	T. C. Ma,; Y. T. Lin,; T. Y. Chen,; L. C. Chou,; H. H. Lin,; HAO-HSIUNG LIN

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