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"y t lin"
Showing items 26-35 of 150 (15 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T07:08:02Z |
Band structure of dilute nitride GaAsSbN
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Y. T. Lin;T. C. Ma;T. Y. Chen;H. H. Lin; Y. T. Lin; T. C. Ma; T. Y. Chen; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:01Z |
Origin of the annealing-induced blue-shift in GaAsSbN
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Y. T. Lin,; T. C. Ma,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:01Z |
GaAsSbN/GaAs long wavelength PIN detectors
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C. K. Chen,; T. C. Ma,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:01Z |
Dilute nitride GaAsSbN grown by gas source molecular beam epitaxy
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H. H. Lin; T. C. Ma; Y. T. Lin; C. K. Chen; T. Y. Chen; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:07:59Z |
Incorporation behaviors of group V elements in GaAsSbN grown by gas source molecular beam epitaxy
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T. C. Ma,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:46Z |
Effect of thermal annealing on the optical properties of GaAsSbN
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Y. T. Lin; T. C. Ma; T. Y. Chen; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:46Z |
Origin of the annealing-induced blue-shift in GaAsSbN bulk layers
|
Y. T. Lin,; T. C. Ma,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:45Z |
Temperature dependence of the energy gaps of GaAsSbN epilayers on GaAs substrates
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T. C. Ma,; T. Y. Chen,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:45Z |
Dilute nitride GaAs0.852Sb0.117N0.031/ GaAs PIN detector with a cut-off wavelength>1.5m
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C. K. Chen; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:44Z |
Incorporation behaviors of group V elements in GaAsSbN grown by gas source molecular beam epitaxy
|
T. C. Ma,; Y. T. Lin,; T. Y. Chen,; L. C. Chou,; H. H. Lin,; HAO-HSIUNG LIN |
Showing items 26-35 of 150 (15 Page(s) Totally)
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