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Institution Date Title Author
臺大學術典藏 2018-09-10T06:34:43Z InAsPSb quaternary alloy grown by gas source molecular beam epitaxy Y. T. Lin,; H. H. Lin; HAO-HSIUNG LIN; G. Tsai,; D. L. Wang,; C. E. Wu,; C. J. Wu,
臺大學術典藏 2018-09-10T06:02:44Z Dipolar dibenzothiophene S,S-dioxide derivatives containing diarylamine: materials for single-layer OLED devices T.-H. Huang; J.-T. Lin; L.-Y. Chen; Y.-T. Lin; C.-C. Wu; CHUNG-CHIH WU
臺大學術典藏 2018-09-10T06:02:01Z Incorporation of group V elements in GaAsSbN grown by gas-source molecular beam epitaxy T. C. Ma; Y. T. Lin; T. Y. Chen; H. H. Lin; T. C. Ma,; Y. T. Lin,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T06:02:00Z Negative deviation from Vegard’s law in GaAsSbN grown by gas-source molecular beam epitaxy Y. T. Lin,; T. C. Ma,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T06:01:59Z GaAsSbN grown on GaAs by gas source molecular beam epitaxy T. C. Ma,; T. Y. Chen,; S. K. Chang,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T06:01:59Z InAsPsb quaternary for mid-infrared application grown by gas source molecular beam epitaxy G. Tsai,; D. L. Wang,; C. E. Wu,; C. R. Wu,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T06:01:59Z InAsPSb bulk layer and quantum well grown by gas source molecular beam epitaxy G. Tsai,; D. L. Wang,; C. E. Wu,; C. R. Wu,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T06:01:59Z Photoluminescence study on GaAsSbN grown by gas source molecular beam epitaxy T. Y. Chen,; T. C. Ma,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T05:29:45Z Low-power Variable-length Fast Fourier Transform Processor Y. T. Lin; P. Y. Tsai; T. D. Chiueh; TZI-DAR CHIUEH
臺大學術典藏 2018-09-10T05:27:15Z Nonconjugated hybrid of carbazole and fluorene: a novel host material for highly efficient green and red phosphorescent OLEDs K.-T. Wong,; Y.-M. Chen,; Y.-T. Lin,; H.-C. Su,; C.-C. Wu,; CHUNG-CHIH WU

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