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"yang bo jun"
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| 國立交通大學 |
2019-08-02T02:15:26Z |
The effect of hydrogen on programmed threshold-voltage distribution in NAND flash memories
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Chiu, Yung-Yueh; Lin, Cheng-Han; Yang, Jhih-Siang; Yang, Bo-Jun; Aoki, Minoru; Takeshita, Toshiaki; Yano, Masaru; Shirota, Riichiro |
| 國立交通大學 |
2019-04-02T05:58:58Z |
Transconductance Distribution in Program/Erase Cycling of NAND Flash Memory Devices: a Statistical Investigation
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Chiu, Yung-Yueh; Lin, I-Chun; Chang, Kai-Chieh; Yang, Bo-Jun; Takeshita, Toshiaki; Yano, Masaru; Shirota, Riichiro |
| 國立交通大學 |
2018-08-21T05:53:13Z |
Evaluation of the Role of Deep Trap State Using Analytical Model in the Program/Erase Cycling of NAND Flash Memory and Its Process Dependence
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Yang, Bo-Jun; Wu, Yu-Ting; Chiu, Yung-Yueh; Kuo, Tse-Mien; Chang, Jung-Ho; Wang, Pin-Yao; Shirota, Riichiro |
| 國立成功大學 |
2017-08-17 |
使用毫米波之超高密度裝置間通訊網路中節能排程及時槽共享演算法
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楊博竣; Yang, Bo-Jun |
| 國立交通大學 |
2015-12-02T02:59:29Z |
Characterization of the charge trapping properties in p-channel silicon-oxide-nitride-oxide-silicon memory devices including SiO2/Si3N4 interfacial transition layer
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Chiu, Yung-Yueh; Yang, Bo-Jun; Li, Fu-Hai; Chang, Ru-Wei; Sun, Wein-Town; Lo, Chun-Yuan; Hsu, Chia-Jung; Kuo, Chao-Wei; Shirota, Riichiro |
| 國立交通大學 |
2015-07-21T08:29:05Z |
New Method to Analyze the Shift of Floating Gate Charge and Generated Tunnel Oxide Trapped Charge Profile in NAND Flash Memory by Program/Erase Endurance
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Shirota, Riichiro; Yang, Bo-Jun; Chiu, Yung-Yueh; Chen, Hsuan-Tse; Ng, Seng-Fei; Wang, Pin-Yao; Chang, Jung-Ho; Kurachi, Ikuo |
| 國立交通大學 |
2014-12-08T15:31:35Z |
Study Trapped Charge Distribution in P-Channel Silicon-Oxide-Nitride-Oxide-Silicon Memory Device Using Dynamic Programming Scheme
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Li, Fu-Hai; Chiu, Yung-Yueh; Lee, Yen-Hui; Chang, Ru-Wei; Yang, Bo-Jun; Sun, Wein-Town; Lee, Eric; Kuo, Chao-Wei; Shirota, Riichiro |
Showing items 1-7 of 7 (1 Page(s) Totally)
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