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The Magnetoresistance Ratio of an MTJ Device and the Influence of Ramping DC Bias Voltage Rate Measured by Conducting Atomic Force Microscope
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Tunneling Magnetoresistance of Magnetic Tunneling Junction Cell Measured by Conducting Atomic Force Microscopy with Ramping Dc Bias Voltage Rate
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显示项目 1-4 / 4 (共1页) 1 每页显示[10|25|50]项目
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