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Showing items 126-150 of 151 (7 Page(s) Totally) << < 1 2 3 4 5 6 7 > >> View [10|25|50] records per page
國立臺灣大學 |
2004 |
捷運內火災意外時煙控與逃生策略之建立與評估
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楊志偉; Yang, Chih-Wei |
國立成功大學 |
2003-10-16 |
Hf-doped and NH3-nitrided high-K gate dielectric thin film with least drain current degradation and flatband voltage shift
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Yang, Chih-Wei; Fang, Yean-Kuen; Lin, C. S.; Tsair, Y. S.; Chen, Shi-Ming; Wang, W. D.; Wang, M. F.; Cheng, Juing-Yi; Chen, C. H.; Yao, Liang-Gi; Chen, S. C.; Liang, M. S. |
國立成功大學 |
2003-07-14 |
Effect of polycrystalline-silicon gate types on the opposite flatband voltage shift in n-type and p-type metal-oxide-semiconductor field-effect transistors for high-k-HfO2 dielectric
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Yang, Chih-Wei; Fang, Yean-Kuen; Chen, C. H.; Chen, S. F.; Lin, C. Y.; Lin, C. S.; Wang, M. F.; Lin, Y. M.; Hou, T. H.; Chen, C. H.; Yao, Liang-Gi; Chen, S. C.; Liang, M. S. |
國立成功大學 |
2003-06-20 |
應用於極大型積體電路的高介電閘極絕緣層電特性及製程最佳化的研究
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楊智偉; Yang, Chih-Wei |
國立成功大學 |
2003-04-17 |
HfO2/HfSixOy high-K gate stack with very low leakage current for low-power poly-Si gated CMOS application
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Yang, Chih-Wei; Fang, Yean-Kuen; Chen, S. F.; Wang, M. F.; Hou, T. H.; Lin, Y. M.; Yao, Liang-Gi; Chen, S. C.; Liang, M. S. |
國立成功大學 |
2003-04 |
Modeling of the gate leakage current reduction in MOSFET with ultra-thin nitrided gate oxide
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Yang, Chih-Wei; Fang, Yean-Kuen; Ting, S. F.; Chen, C. H.; Wang, W. D.; Lin, T. Y.; Wang, M. F.; Yu, M. C.; Chen, C. L.; Yao, Liang-Gi; Chen, S. C.; Yu, C. H.; Liang, M. S. |
國立成功大學 |
2003-03-06 |
Effective improvement of high-k Hf-silicate/silicon interface with thermal nitridation
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Yang, Chih-Wei; Fang, Yean-Kuen; Chen, Shih-Fang; Lin, Chun-Yu; Wang, Ming-Fang; Lin, Yeou-Ming; Hou, Tuo-Hung; Yao, Liang-Gi; Chen, Shih-Chang; Liang, Mong-Song |
國立成功大學 |
2003-01 |
Improvement of short-channel characteristics of a 0.1-mu m PMOSFET with ultralow-temperature nitride spacer by using a novel oxide capped boron uphill treatment
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Yang, Chih-Wei; Fang, Yean-Kuen; Chen, C. H.; Wang, W. D.; Ting, S. F.; Cheng, J. Y.; Wang, M. F.; Chen, C. L.; Yao, Liang-Gi; Lee, T. L.; Chen, S. C.; Yu, C. H.; Liang, M. S. |
國立成功大學 |
2002-09-26 |
Dramatic reduction of gate leakage current in 1.61 nm HfO2 high-k dielectric poly-silicon gate with AI(2)O(3) capping layer
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Yang, Chih-Wei; Fang, Yean-Kuen; Chen, Chien-Hao; Wang, Wen-De; Lin, Tin-Yu; Wang, Ming-Fang; Hou, Tuo-Hung; Cheng, Juing-Yi; Yao, Liang-Gi; Chen, Shyh-Chang; Yu, Chen-Hua; Liang, Mong-Song |
國立成功大學 |
2002-06-06 |
捷運列車引致土層振動與衰減特性之研究
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楊智幃; Yang, Chih-Wei |
國立成功大學 |
2002-05 |
Downscaling limit of equivalent oxide thickness in formation of ultrathin gate dielectric by thermal-enhanced remote plasma nitridation
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Chen, Chien-Hao; Fang, Yean-Kuen; Ting, Shyh-Fann; Hsieh, Wen-Tse; Yang, Chih-Wei; Hsu, Tzu-Hsuan; Yu, Mo-Chiun; Lee, Tze-Liang; Chen, Shih-Chang; Yu, Chen-Hua; Liang, Mong-Song |
國立成功大學 |
2002-04 |
The 1.3-1.6 nm nitrided oxide prepared by NH3 nitridation and rapid thermal annealing for 0.1 mu m and beyond CMOS technology application
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Chen, Chung-Hui; Fang, Yean-Kuen; Yang, Chih-Wei; Tsair, Yong-Shiuan; Wang, Ming-Fang; Yao, Liang-Gi; Chen, S. C.; Yu, Chen-Hua; Liang, Mong-Song |
國立成功大學 |
2002-04 |
Improved current drivability and poly-gate depletion of submicron PMOSFET with poly-SiGe gate and ultra-thin nitride gate dielectric
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Chen, Chung-Hui; Fang, Yean-Kuen; Yang, Chih-Wei; Ting, Shyh-Fann; Tsair, Yong-Shiuan; Chang, Cheng-Nan; Hou, Tuo-Hong; Wang, Ming-Fang; Yu, Mo-Chiun; Lin, Chuing-Liang; Chen, S. C.; Yu, Chen-Hua; Liang, Mong-Song |
國立成功大學 |
2002-04 |
Determination of deep ultrathin equivalent oxide thickness (EOT) from measuring flat-band C-V curve
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Chen, Chung-Hui; Fang, Yean-Kuen; Yang, Chih-Wei; Ting, Shyh-Fann; Tsair, Yong-Shiuan; Wang, Ming-Fang; Yao, Liang-Gi; Chen, S. C.; Yu, Chen-Hua; Liang, Mong-Song |
東吳大學 |
2002 |
台灣原住民族自治體制的理論與實際--以建構中的鄒族為例
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楊智偉; YANG, CHIH-WEI |
國立成功大學 |
2001-12 |
To optimize electrical properties of the ultrathin (1.6 nm) nitride/oxide gate stacks with bottom oxide materials and post-deposition treatment
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Chen, Chein-Hao; Fang, Yean-Kuen; Yang, Chih-Wei; Ting, Shyh-Fann; Tsair, Yong-Shiuan; Wang, Ming-Fang; Hou, Tuo-Hong; Yu, Mo-Chiun; Chen, Shih-Chang; Jang, Syun-Ming; Yu, D. C. H.; Liang, Mong-Song |
國立成功大學 |
2001-12 |
Orthogonal subspace projection-based approaches to classification of MR image sequences
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Wang, Chuin-Mu; Yang, Sheng-Chih; Chung, Pau-Choo; Chang, Chein-I; Lo, Chien-Shum; Chen, C. C.; Yang, Chih-Wei; Wen, Chia-Hsin |
國立成功大學 |
2001-11 |
A deep submicron CMOS process compatible suspending high-Q inductor
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Chen, Chung-Hui; Fang, Yean-Kuen; Yang, Chih-Wei; Tang, C. S. |
國立成功大學 |
2001-11 |
Nitrogen implanted polysilicon resistor for high-voltage CMOS technology application
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Chen, Chung-Hui; Fang, Yean-Kuen; Yang, Chih-Wei; Wang, Ta-Wei; Hsu, Yung-Lung; Hsu, Shun-Liang |
國立成功大學 |
2001-08 |
Thermally-enhanced remote plasma nitrided ultrathin (1.65 nm) gate oxide with excellent performances in reduction of leakage current and boron diffusion
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Chen, Chung-Hui; Fang, Yean-Kuen; Yang, Chih-Wei; Ting, Shyh-Fann; Tsair, Yong-Shiuan; Yu, Mo-Chiun; Hou, Tuo-Hung; Wang, Ming-Fang; Chen, S. C.; Yu, Chen-Hua; Liang, Mong-Song |
國立成功大學 |
2001-07 |
The effect of remote plasma nitridation on the integrity of the ultrathin gate dielectric films in 0.13 mu m CMOS technology and beyond
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Ting, Shyh-Fann; Fang, Yean-Kuen; Chen, Chung-Hui; Yang, Chih-Wei; Hsieh, Wen-Tse; Ho, Jyh-Jier; Yu, Mo-Chiun; Jang, Syun-Ming; Yu, Chen-Hua; Liang, Mong-Song; Chen, S; Shih, R |
國立成功大學 |
2001-06-07 |
He plus remote plasma nitridation of ultra-thin gate oxide for deep submicron CMOS technology applications
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Ting, Shyh-Fann; Fang, Yean-Kuen; Chen, Chien-Hao; Yang, Chih-Wei; Yu, Mo-Chiun; Jang, Syun-Ming; Yu, Chen-Hua; Liang, Mong-Song; Chen, Sun-Way; Shih, R. |
國立成功大學 |
2001-06 |
High-quality ultrathin (1.6 nm) nitride/oxide stack gate dielectrics prepared by combining remote plasma nitridation and LPCVD technologies
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Chen, Chung-Hui; Fang, Yean-Kuen; Yang, Chih-Wei; Ting, Shyh-Fann; Tsair, Yong-Shiuan; Wang, Ming-Fang; Lin, Yu-Min; Yu, Mo-Chiun; Chen, S. C.; Yu, Chen-Hua; Liang, Mong-Song |
國立成功大學 |
2001-03 |
Effects of post-deposition treatments on ultrathin nitride/oxide gate stack prepared by RTCVD for ULSI devices
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Chen, Chung-Hui; Fang, Yean-Kuen; Yang, Chih-Wei; Ting, Shyh-Fann; Tsair, Yong-Shiuan; Wang, Ming-Fang; Chen, S. C.; Yu, Chen-Hua; Liang, Mong-Song |
國立成功大學 |
2001-01-01 |
A novel multi-level interconnect scheme with air as low K inter-metal dielectric for ultradeep submicron application
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Chen, Chung-Hui; Fang, Yean-Kuen; Lin, Chun-Sheng; Yang, Chih-Wei; Hsieh, Jang-Cheng |
Showing items 126-150 of 151 (7 Page(s) Totally) << < 1 2 3 4 5 6 7 > >> View [10|25|50] records per page
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