| 國立交通大學 |
2014-12-16T06:14:56Z |
SRAM based on 6 transistor structure including a first inverter, a second inverter, a first pass-gate transistor, and a second pass-gate transistor
|
CHUANG Ching-Te; Jou Shyh-Jye; Hwang Wei; Lin Yi-Wei; Tsai Ming-Chien; Yang Hao-I; Tu Ming-Hsien; Shih Wei-Chiang; Lien Nan-Chun; Lee Kuen-Di |
| 國立交通大學 |
2014-12-16T06:14:56Z |
Oscillator based on a 6T SRAM for measuring the Bias Temperature Instability
|
Chuang Ching-Te; Jou Shyh-Jye; Hwang Wei; Tsai Ming-Chien; Lin Yi-Wei; Yang Hao-I; Tu Ming-Hsien; Shih Wei-Chiang; Lien Nan-Chun; Lee Kuen-Di |
| 國立交通大學 |
2014-12-16T06:14:49Z |
STATIC RANDOM ACCESS MEMORY WITH RIPPLE BIT LINES/SEARCH LINES FOR IMROVING CURRENT LEAKAGE/VARIATION TOLERANCE AND DENSITY/PERFORMANCE
|
CHUANG Ching-Te; YANG Hao-I; LU Chien-Yu; CHEN Chien-Hen; CHANG Chi-Shin; HUANG Po-Tsang; LAI Shu-Lin; HWANG Wei; JOU Shyh-Jye; TU Ming-Hsien |
| 國立交通大學 |
2014-12-16T06:14:10Z |
Disturb-free static random access memory cell
|
Chuang Ching-Te; Yang Hao-I; Lin Jihi-Yu; Yang Shyh-Chyi; Tu Ming-Hsien; Hwang Wei; Jou Shyh-Jye; Lee Kun-Ti; Li Hung-Yu |
| 國立交通大學 |
2014-12-16T06:14:08Z |
Static random access memory with data controlled power supply
|
Chuang Ching-Te; Yang Hao-I; Hsia Mao-Chih; Lin Yung-Wei; Lu Chien-Yu; Tu Ming-Hsien; Hwang Wei; Jou Shyh-Jye; Chen Chia-Cheng; Shih Wei-Chiang |
| 國立交通大學 |
2014-12-16T06:14:07Z |
Data-aware dynamic supply random access memory
|
Chuang Ching-Te; Yang Hao-I; Lin Yi-Wei; Hwang Wei; Shih Wei-Chiang; Chen Chia-Cheng |
| 國立交通大學 |
2014-12-16T06:14:04Z |
Gate oxide breakdown-withstanding power switch structure
|
Yang Hao-I; Chuang Ching-Te; Hwang Wei |
| 國立交通大學 |
2014-12-16T06:14:01Z |
Static random access memory cell and method of operating the same
|
Chiu Yi-Te; Chang Ming-Hung; Yang Hao-I; Hwang Wei |
| 國立交通大學 |
2014-12-16T06:13:59Z |
Dual-port subthreshold SRAM cell
|
Chiu Yi-Te; Chang Ming-Hung; Yang Hao-I; Hwang Wei |
| 國立交通大學 |
2014-12-16T06:13:54Z |
Low power static random access memory
|
Chuang Ching-Te; Yang Hao-I; Hsia Mao-Chih; Hwang Wei; Chen Chia-Cheng; Shih Wei-Chiang |
| 國立交通大學 |
2014-12-16T06:13:50Z |
Static random access memory with ripple bit lines/search lines for improving current leakage/variation tolerance and density/performance
|
Chuang Ching-Te; Yang Hao-I; Lu Chien-Yu; Chen Chien-Hen; Chang Chi-Shin; Huang Po-Tsang; Lai Shu-Lin; Hwang Wei; Jou Shyh-Jye; Tu Ming-Hsien |
| 國立交通大學 |
2014-12-16T06:13:49Z |
Oscillato based on a 6T SRAM for measuring the bias temperature instability
|
Chuang Ching-Te; Jou Shyh-Jye; Hwang Wei; Tsai Ming-Chien; Lin Yi-Wei; Yang Hao-I; Tu Ming-Hsien; Shih Wei-Chiang; Lien Nan-Chun; Lee Kuen-Di |
| 國立交通大學 |
2014-12-16T06:13:47Z |
Static random access memory apparatus and bit-line voltage controller thereof
|
Chuang Ching-Te; Lien Nan-Chun; Liao Wei-Nan; Chang Chi-Hsin; Yang Hao-I; Hwang Wei; Tu Ming-Hsien |
| 國立交通大學 |
2014-12-12T01:23:24Z |
高可靠度奈米級靜態隨機存取記憶體設計： 可靠度分析與改善技術
|
楊皓義; Yang, Hao-I; 黃威; Hwang, Wei |
| 國立交通大學 |
2014-12-08T15:37:44Z |
Impacts of gate-oxide breakdown on power-gated SRAM
|
Yang, Hao-I; Hwang, Wei; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:35:45Z |
A 40nm 1.0Mb Pipeline 6T SRAM with Variation-Tolerant Step-Up Word-Line and Adaptive Data-Aware Write-Assist
|
Chang, Chi-Shin; Yang, Hao-I; Liao, Wei-Nan; Lin, Yi-Wei; Lien, Nan-Chun; Chen, Chien-Hen; Chuang, Ching-Te; Hwang, Wei; Jou, Shyh-Jye; Tu, Ming-Hsien; Huang, Huan-Shun; Hu, Yong-Jyun; Kan, Paul-Sen; Cheng, Cheng-Yo; Wang, Wei-Chang; Wang, Jian-Hao; Lee, Kuen-Di; Chen, Chia-Cheng; Shih, Wei-Chiang |
| 國立交通大學 |
2014-12-08T15:33:15Z |
Impacts of NBTI/PBTI on Timing Control Circuits and Degradation Tolerant Design in Nanoscale CMOS SRAM
|
Yang, Hao-I.; Yang, Shyh-Chyi; Hwang, Wei; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:31:09Z |
Impacts of NBTI/PBTI and Contact Resistance on Power-Gated SRAM With High-kappa Metal-Gate Devices
|
Yang, Hao-I; Hwang, Wei; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:30:06Z |
High-Performance 0.6V V-MIN 55nm 1.0Mb 6T SRAM with Adaptive BL Bleeder
|
Yang, Hao-I; Lin, Yi-Wei; Hsia, Mao-Chih; Lin, Geng-Cing; Chang, Chi-Shin; Chen, Yin-Nien; Chuang, Ching-Te; Hwang, Wei; Jou, Shyh-Jye; Lien, Nan-Chun; Li, Hung-Yu; Lee, Kuen-Di; Shih, Wei-Chiang; Wu, Ya-Ping; Lee, Wen-Ta; Hsu, Chih-Chiang |
| 國立交通大學 |
2014-12-08T15:29:40Z |
A 0.33-V, 500-kHz, 3.94-mu W 40-nm 72-Kb 9T Subthreshold SRAM With Ripple Bit-Line Structure and Negative Bit-Line Write-Assist
|
Lu, Chien-Yu; Tu, Ming-Hsien; Yang, Hao-I; Wu, Ya-Ping; Huang, Huan-Shun; Lin, Yuh-Jiun; Lee, Kuen-Di; Kao, Yung-Shin; Chuang, Ching-Te; Jou, Shyh-Jye; Hwang, Wei |
| 國立交通大學 |
2014-12-08T15:25:40Z |
TIMING CONTROL DEGRADATION AND NBTI/PBTI TOLERANT DESIGN FOR WRITE-REPLICA CIRCUIT IN NANOSCALE CMOS SRAM
|
Yang, Shyh-Chyi; Yang, Hao-I; Chuang, Ching-Te; Hwang, Wei |
| 國立交通大學 |
2014-12-08T15:25:25Z |
A MICRO-WATT MULTI-PORT REGISTER FILE WITH WIDE OPERATING VOLTAGE RANGE
|
Yang, Shyh-Chyi; Yang, Hao-I; Hwang, Wei |
| 國立交通大學 |
2014-12-08T15:25:24Z |
Impacts of Contact Resistance and NBTI/PBTI on SRAM with High-kappa Metal-Gate Devices
|
Yang, Hao-I; Chuang, Ching-Te; Hwang, Wei |
| 國立交通大學 |
2014-12-08T15:25:19Z |
Impact of Gate-Oxide Breakdown on Power-Gated SRAM
|
Yang, Hao-I; Chuang, Ching-Te; Hwang, Wei |
| 國立交通大學 |
2014-12-08T15:23:36Z |
Impacts of NBTI and PBTI on Power-Gated SRAM with High-k Metal-Gate Devices
|
Yang, Hao-I; Chuang, Ching-Te; Hwang, Wei |
