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| 國立交通大學 |
2014-12-08T15:19:30Z |
Singlemode (SMSR > 40 dB) proton-implanted photonic crystal vertical-cavity surface-emitting lasers
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Yang, HPD; Lai, FI; Chang, YH; Yu, HC; Sung, CP; Kuo, HC; Wang, SC; Lin, SY; Chi, JY |
| 國立交通大學 |
2014-12-08T15:18:42Z |
Characteristics of MOCVD- and MBE-grown InGa(N)As VCSELs
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Yang, HPD; Lu, C; Hsiao, R; Chiou, C; Lee, C; Huang, C; Yu, H; Wang, C; Lin, K; Maleev, NA; Kovsh, AR; Sung, C; Lai, C; Wang, J; Chen, J; Lee, T; Chi, JY |
| 國立交通大學 |
2014-12-08T15:18:22Z |
Singlemode InAs quantum dot photonic crystal VCSELs
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Yang, HPD; Chang, YH; Lai, FI; Yu, HC; Hsu, YJ; Lin, G; Hsiao, RS; Kuo, HC; Wang, SC; Chi, JY |
| 國立交通大學 |
2014-12-08T15:17:42Z |
1.3-mu m InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE
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Yu, HC; Wang, JS; Su, YK; Chang, SJ; Lai, FI; Chang, YH; Kuo, HC; Sung, CP; Yang, HPD; Lin, KF; Wang, JM; Chi, JY; Hsiao, RS; Mikhrin, S |
| 國立交通大學 |
2014-12-08T15:02:13Z |
A simple fabrication process of T-shaped gates using a deep-UV/electron-beam/deep-UV tri-layer resist system and electron-beam lithography
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Lai, YL; Chang, EY; Chang, CY; Yang, HPD; Nakamura, K; Shy, SL |
Showing items 1-5 of 5 (1 Page(s) Totally)
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