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Showing items 1-17 of 17 (1 Page(s) Totally)
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| 國家衛生研究院 |
2024-04 |
Reducing brain Abeta burden ameliorates high-fat diet-induced fatty liver disease in APP/PS1 mice
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Tsay, HJ;Gan, YL;Su, YH;Sun, YY;Yao, HH;Chen, HW;Hsu, YT;Hsu, JTA;Wang, HD;Shie, FS |
| 國家衛生研究院 |
2022-01-24 |
Reduced mitochondria membrane potential and lysosomal acidification are associated with decreased oligomeric Abeta degradation induced by hyperglycemia: A study of mixed glia cultures
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Huang, YC;Hsu, SM;Shie, FS;Shiao, YJ;Chao, LJ;Chen, HW;Yao, HH;Chien, MA;Lin, CC;Tsay, HJ |
| 國家衛生研究院 |
2019-11-27 |
A high-sucrose diet aggravates Alzheimer's disease pathology, attenuates hypothalamic leptin signaling, and impairs food-anticipatory activity in APPswe/PS1dE9 mice
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Yeh, SH;Shie, FS;Liu, HK;Yao, HH;Kao, PC;Lee, YH;Chen, LM;Hsu, SM;Chao, LJ;Wu, KW;Shiao, YJ;Tsay, HJ |
| 國立交通大學 |
2014-12-08T15:39:44Z |
Characteristics of stable emission GaN-based resonant-cavity light-emitting diodes
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Lin, CF; Yao, HH; Lu, JW; Hsieh, YL; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:39:36Z |
MOCVD growth of AlN/GaN DBR structures under various ambient conditions
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Yao, HH; Lin, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:37:10Z |
MOCVD growth of highly strained InGaAs : Sb-GaAs-GaAsP quantum well vertical cavity surface-emitting lasers with 1.27 mu m emission
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Kuo, HC; Yao, HH; Chang, YH; Chang, YA; Tsai, MY; Hsieh, J; Chang, EY; Wang, SC |
| 國立交通大學 |
2014-12-08T15:26:02Z |
MOCVD growth of AlN/GaN DBR structure under various ambient conditions
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Yao, HH; Lin, CF; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:39Z |
An optically pumped blue GaN-based vertical-cavity surface emitting laser employing AIN/GaN and Ta2O5/NO2 distributed bragg reflectors
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Kao, CC; Yao, HH; Peng, YC; Lu, TC; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:19:39Z |
High-speed modulation of InGaAs : Sb-GaAs-GaAsP quantum-well vertical-cavity surface-emitting lasers with 1.27-mu m emission wavelength
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Kuo, HC; Chang, YH; Yao, HH; Chang, YA; Lai, FI; Tsai, MY; Wang, SC |
| 國立交通大學 |
2014-12-08T15:19:13Z |
Influence of dislocation density on photoluminescence intensity of GaN
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Falth, JF; Gurusinghe, MN; Liu, XY; Andersson, TG; Ivanov, IG; Monemar, B; Yao, HH; Wang, SC |
| 國立交通大學 |
2014-12-08T15:18:37Z |
Fabrication and performance of blue GaN-based vertical-cavity surface emitting laser employing AlN/GaN and Ta2O5/SiO2 distributed Bragg reflector
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Kao, CC; Peng, YC; Yao, HH; Tsai, JY; Chang, YH; Chu, JT; Huang, HW; Kao, TT; Lu, TC; Kuo, HC; Wang, SC; Lin, CF |
| 國立交通大學 |
2014-12-08T15:17:23Z |
Crack-free GaN/AlN distributed Bragg reflectors incorporated with GaN/AlN superlattices grown by metalorganic chemical vapor deposition
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Huang, GS; Lu, TC; Yao, HH; Kuo, HC; Wang, SC; Lin, CW; Chang, L |
| 國立交通大學 |
2014-12-08T15:17:16Z |
The lasing characteristics of GaN-based vertical-cavity surface-emitting laser with AlN-GaN and Ta2O5-SiO2 distributed Bragg reflectors
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Kao, CC; Lu, TC; Huang, HW; Chu, JT; Peng, YC; Yao, HH; Tsai, JY; Kao, TT; Kuo, HC; Wang, SC; Lin, CF |
| 國立交通大學 |
2014-12-08T15:17:03Z |
InGaN self-assembled quantum dots grown by metal-organic chemical vapour deposition with growth interruption
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Yao, HH; Lu, TC; Huang, GS; Chen, CY; Liang, WD; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:16:54Z |
Room-temperature operation of optically pumped blue-violet GaN-based vertical-cavity surface-emitting lasers fabricated by laser lift-off
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Chu, JT; Lu, TC; Yao, HH; Kao, CC; Liang, WD; Tsai, JY; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:16:34Z |
Aluminum incorporation into AlGaN grown by low-pressure metal organic vapor phase epitaxy
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Huang, GS; Yao, HH; Lu, TC; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:05:24Z |
A VARIABLE POWER-SYSTEM WITH HOLOGRAPHIC OPTICAL-ELEMENTS
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TSAI, YK; YAO, HH; SU, DC |
Showing items 1-17 of 17 (1 Page(s) Totally)
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