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Institution Date Title Author
國立交通大學 2019-01-01 Study of Thick Copper Metallization with WNx as Diffusion Barrier for AlGaN/GaN HEMTs Chang, Edward Y.; Maa, J. S.; Huang, T. J.; Hsu, H. T.; Lee, M. W.; Tsai, M. Y.; Wang, C.; Yao, J. N.; Lin, Y. C.
國立交通大學 2019-01-01 Study of Enhancement-Mode Tri-Gate InAs HEMTs for Low Noise Application Chang, Edward Y.; Yao, J. N.; Huang, T. J.; Hsu, H. T.; Lee, M. W.; Lin, Y. C.; Kuo, C. N.; Wang, C.
國立交通大學 2017-04-21T06:49:24Z Optimization of gate insulator material for GaN MIS-HEMT Lin, Y. C.; Lin, T. W.; Wu, C. H.; Yao, J. N.; Hsu, H. T.; Shih, W. C.; Kakushima, K.; Tsutsui, K.; Iwai, H.; Chang, E. Y.

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