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| 國立交通大學 |
2019-01-01 |
Study of Thick Copper Metallization with WNx as Diffusion Barrier for AlGaN/GaN HEMTs
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Chang, Edward Y.; Maa, J. S.; Huang, T. J.; Hsu, H. T.; Lee, M. W.; Tsai, M. Y.; Wang, C.; Yao, J. N.; Lin, Y. C. |
| 國立交通大學 |
2019-01-01 |
Study of Enhancement-Mode Tri-Gate InAs HEMTs for Low Noise Application
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Chang, Edward Y.; Yao, J. N.; Huang, T. J.; Hsu, H. T.; Lee, M. W.; Lin, Y. C.; Kuo, C. N.; Wang, C. |
| 國立交通大學 |
2017-04-21T06:49:24Z |
Optimization of gate insulator material for GaN MIS-HEMT
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Lin, Y. C.; Lin, T. W.; Wu, C. H.; Yao, J. N.; Hsu, H. T.; Shih, W. C.; Kakushima, K.; Tsutsui, K.; Iwai, H.; Chang, E. Y. |
Showing items 1-3 of 3 (1 Page(s) Totally)
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