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| 國立交通大學 |
2017-04-21T06:49:40Z |
A Comprehensive Study of Ge1-xSix on Ge for the Ge nMOSFETs with Tensile Stress, Shallow Junctions and Reduced Leakage
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Luo, Guang-Li; Huang, Shih-Chiang; Chung, Cheng-Ting; Heh, Dawei; Chien, Chao-Hsin; Cheng, Chao-Ching; Lee, Yao-Jen; Wu, Wen-Fa; Hsu, Chiung-Chih; Kuo, Mei-Ling; Yao, Jay-Yi; Chang, Mao-Nan; Liu, Chee-Wee; Hu, Chenming; Chang, Chun-Yen; Yang, Fu-Liang |
| 國立交通大學 |
2017-04-21T06:48:19Z |
Diamond-shaped Ge and Ge0.9Si0.1 Gate-All-Around Nanowire FETs with Four {111} Facets by Dry Etch Technology
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Lee, Yao-Jen; Hou, Fu-Ju; Chuang, Shang-Shiun; Hsueh, Fu-Kuo; Kao, Kuo-Hsing; Sung, Po-Jung; Yuan, Wei-You; Yao, Jay-Yi; Lu, Yu-Chi; Lin, Kun-Lin; Wu, Chien-Ting; Chen, Hisu-Chih; Chen, Bo-Yuan; Huang, Guo-Wei; Chen, Henry J. H.; Li, Jiun-Yun; Li, Yiming; Samukawa, Seiji; Chao, Tien-Sheng; Tseng, Tseung-Yuen; Wu, Wen-Fa; Hou, Tuo-Hung; Yeh, Wen-Kuan |
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