臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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Institution	Date	Title	Author
國立成功大學	2024-11	Threshold Voltage Stability in AlGaN/GaN MIS-HEMT Structure Under Cryogenic Environment	Chen;Yi-Ho;Chu;Fu-Chuan;Uma;M;Aslam;Muhammad;Lee;Yao-Jen;Li;Yiming;Samukawa;Seiji;Wang;Yeong-Her
國立成功大學	2024-08	Sub- μm Gate-All-Around-Like Amorphous-InGaZnO Transistors With Record-High fT of 2.09 GHz	Chang;Shu-Wei;Hu;Hsin-Hui;Wu;Chen-Wei;Lu;Wen-Hsiang;Lee;Wen-Hsi;Lee;Yao-Jen
國立成功大學	2024-06-3	Temperature Dependent Anomalous Threshold Voltage Modulation of a-IGZO TFT by Incorporating Variant Gate Stresses	Aslam;Muhammad;Chang;Shu-Wei;Chen;Yi-Ho;Lee;Yao-Jen;Li;Yiming;Lee;Wen-Hsi
國立成功大學	2024-05-21	Nitrogen Configuration Effects on Charge Carrier Dynamics in CsPbBr3/Carbon Dots S-Scheme Heterojunction for Photocatalytic CO2 Reduction	Tsai;Kai-An;Chang;Yao-Jen;Li;Yu-Chieh;Zheng;Meng-Wei;Chang;Jui-Cheng;Liu;Shou-Heng;Tseng;Shih-Wen;Li;Yan;Pu;Ying-Chih
國立成功大學	2024	Mechanism of Threshold Voltage Instability in Double Gate α-IGZO Nanosheet TFT Under Bias and Temperature Stress	Aslam;Muhammad;Chang;Shu-Wei;Chen;Yi-Ho;Lee;Yao-Jen;Li;Yiming;Lee;Wen-Hsi
國立成功大學	2024	Temperature-Dependent Hydrogen Modulations of Ultra-Scaled a-IGZO Thin Film Transistor Under Gate Bias Stress	Aslam;Muhammad;Chang;Shu-Wei;Chuang;Min-Hui;Chen;Yi-Ho;Lee;Yao-Jen;Li;Yiming
國立成功大學	2023-03	TCAD-Based RF performance prediction and process optimization of 3D monolithically stacked complementary FET	Chang;Shu-Wei;Chou;Jia-Hon;Lee;Wen-Hsi;Lee;Yao-Jen;Lu;Darsen, Darsen D.
國立成功大學	2023	3-D Monolithic Stacking of Complementary-FET on CMOS for Next Generation Compute-In-Memory SRAM	Baig;Aftab, Md.;Yeh;Cheng-Jui;Chang;Shu-Wei;Qiu;Bo-Han;Huang;Xiao-Shan;Tsai;Cheng-Hsien;Chang;Yu-Ming;Sung;Po-Jung;Su;Chun-Jung;Cho;Ta-Chun;De;Sourav;Lu;Darsen;Lee;Yao-Jen;Lee;Wen-Hsi;Wu;Wen-Fa;Yeh;Wen-Kuan
國立成功大學	2022-09-1	Nanosheet-Compatible Complementary-Field Effect Transistor Logic Non-Volatile Memory Device	Chang;Shu-Wei;Chang;Yu-Ming;Lee;Wen-Hsi;Lee;Yao-Jen;Lu;Darsen, Darsen D.
國立成功大學	2022-02	Compact model of retention characteristics of ferroelectric FinFET synapse with MFIS gate stack	Baig;Aftab, Md;Le;Hoang-Hiep;De;Sourav;Chang;Che-Wei;Hsieh;Chia-Chi;Huang;Xiao-Shan;Lee;Yao-Jen;Lu;Darsen, Darsen D.

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