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"yarn kf"的相关文件
显示项目 1-10 / 13 (共2页)
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每页显示[10|25|50]项目
| 國立交通大學 |
2014-12-08T15:05:52Z |
NOVEL GAAS VOLTAGE-CONTROLLABLE NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR PREPARED BY MOLECULAR-BEAM EPITAXY
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YARN, KF; WANG, YH; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:05:46Z |
GEOMETRY-EFFECTS ON THE GAAS BIPOLAR UNIPOLAR NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR
|
YARN, KF; WANG, YH; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:05:43Z |
A NOVEL 3-TERMINAL VOLTAGE-CONTROLLED SWITCHING DEVICE PREPARED BY MOLECULAR-BEAM EPITAXY
|
WANG, YH; YARN, KF; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:05:38Z |
A TRISTATE SWITCH USING TRIANGULAR BARRIERS
|
WANG, YH; YARN, KF; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:05:34Z |
CURRENT-INJECTION 3-TERMINAL GAAS REGENERATIVE SWITCHES
|
WANG, YH; YARN, KF; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:05:34Z |
INVESTIGATION OF 3-TERMINAL VOLTAGE-CONTROLLED SWITCHING DEVICES PREPARED BY MOLECULAR-BEAM EPITAXY
|
WANG, YH; YARN, KF; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:05:33Z |
A NOVEL GAAS CURRENT-CONTROLLED BIPOLAR UNIPOLAR TRANSITION NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR PREPARED BY MOLECULAR-BEAM EPITAXY
|
YARN, KF; WANG, YH; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:05:33Z |
ROOM-TEMPERATURE OPERATION OF A NOVEL NEGATIVE DIFFERENTIAL RESISTANCE DEVICE PREPARED BY MOLECULAR-BEAM EPITAXY
|
YARN, KF; WANG, YH; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:05:33Z |
VOLTAGE-CONTROLLED 3 TERMINAL GAAS NEGATIVE DIFFERENTIAL RESISTANCE DEVICE USING N+-I-P+-I-N+ STRUCTURE
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YARN, KF; WANG, YH; CHANG, CY; CHANG, CS |
| 國立交通大學 |
2014-12-08T15:05:31Z |
CHARACTERIZATION OF A GAAS CURRENT-CONTROLLED BIPOLAR-UNIPOLAR TRANSITION NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR
|
YARN, KF; WANG, YH; CHANG, CY |
显示项目 1-10 / 13 (共2页)
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每页显示[10|25|50]项目
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