臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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Institution	Date	Title	Author
元智大學	2010-01	DC and RF performance improvement of 70nm quantum well field effect transistor by narrowing source - drain spacing technology	許恒通; Chien-I Kuo; Edward Yi Chang; Yasuyuki Miyamoto; Chien-Ying Wu; Yu-Lin Chen; Yu-Lin Hsiao
元智大學	2009-12	A Novel Metamorphic High Electron Mobility Transistors with (InxGa1-xAs)m/(InAs)n Superlattice Channel Layer for Millimeter-Wave Applications	許恒通; Chien-I Kuo; Jung-Chi Lu; Edward Yi Chang; Chien-Ying Wu; Yasuyuki Miyamoto; Wen-Chung Tsern
元智大學	2009-12	A Novel Metamorphic High Electron Mobility Transistors with (InxGa1-xAs)m/(InAs)n Superlattice Channel Layer for Millimeter-Wave Applications	許恒通; Chien-I Kuo; Jung-Chi Lu; Edward Yi Chang; Chien-Ying Wu; Yasuyuki Miyamoto; Wen-Chung Tsern
元智大學	2009-10	InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic - Layer -Deposited Al2O3 Gate Dielectric	許恒通; Chia-Yuan Chang; Edward Yi Chang; Hai-Dang Trinh; Yasuyuki Miyamoto
元智大學	2009-10	InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic - Layer -Deposited Al2O3 Gate Dielectric	許恒通; Chia-Yuan Chang; Edward Yi Chang; Hai-Dang Trinh; Yasuyuki Miyamoto
元智大學	2009-10	InAs - Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric	許恒通; Chia-Yuan Chang; Edward Yi Chang; Wei-Ching Huang; Yung-Hsuan Su; Hai-Dang Trinh; Yasuyuki Miyamoto
元智大學	2009-10	InAs - Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric	許恒通; Chia-Yuan Chang; Edward Yi Chang; Wei-Ching Huang; Yung-Hsuan Su; Hai-Dang Trinh; Yasuyuki Miyamoto
元智大學	2009-10	InAs - Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric	許恒通; Chia-Yuan Chang; Edward Yi Chang; Wei-Ching Huang; Yung-Hsuan Su; Hai-Dang Trinh; Yasuyuki Miyamoto
元智大學	2009-05	A 40-nm-Gate InAs/InGaAs Composite-Channel HEMT with 2200 mS/mm and 500-GHz fT	許恒通; Chien-I Kuo; Chien-Ying Wu; Edward Yi Chang; Yasuyuki Miyamoto; Yu-Lin Chen; Dhrubes Biswas
元智大學	2009-05	A 40-nm-Gate InAs/InGaAs Composite-Channel HEMT with 2200 mS/mm and 500-GHz fT	許恒通; Chien-I Kuo; Chien-Ying Wu; Edward Yi Chang; Yasuyuki Miyamoto; Yu-Lin Chen; Dhrubes Biswas

Showing items 11-20 of 38 (4 Page(s) Totally)
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