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Showing items 1-25 of 25 (1 Page(s) Totally)
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Institution	Date	Title	Author
臺大學術典藏	2021-09-02T00:04:01Z	Uniform 4-Stacked Ge0.9Sn0.1Nanosheets Using Double Ge0.95Sn0.05Caps by Highly Selective Isotropic Dry Etch	Tu C.-T;Huang Y.-S;Cheng C.-Y;Tsai C.-E;Chen J.-Y;Ye H.-Y;Lu F.-L;Liu C.W.; Tu C.-T; Huang Y.-S; Cheng C.-Y; Tsai C.-E; Chen J.-Y; Ye H.-Y; Lu F.-L; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:04:01Z	Uniform 4-Stacked Ge0.9Sn0.1Nanosheets Using Double Ge0.95Sn0.05Caps by Highly Selective Isotropic Dry Etch	Tu C.-T;Huang Y.-S;Cheng C.-Y;Tsai C.-E;Chen J.-Y;Ye H.-Y;Lu F.-L;Liu C.W.; Tu C.-T; Huang Y.-S; Cheng C.-Y; Tsai C.-E; Chen J.-Y; Ye H.-Y; Lu F.-L; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:04:01Z	Vertically stacked strained 3-GeSn-Nanosheet pGAAFETs on Si Using GeSn/Ge CVD epitaxial growth and the optimum selective channel release process	Huang Y.-S;Lu F.-L;Tsou Y.-J;Ye H.-Y;Lin S.-Y;Huang W.-H;Liu C.W.; Huang Y.-S; Lu F.-L; Tsou Y.-J; Ye H.-Y; Lin S.-Y; Huang W.-H; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:04:01Z	Vertically stacked strained 3-GeSn-Nanosheet pGAAFETs on Si Using GeSn/Ge CVD epitaxial growth and the optimum selective channel release process	Huang Y.-S;Lu F.-L;Tsou Y.-J;Ye H.-Y;Lin S.-Y;Huang W.-H;Liu C.W.; Huang Y.-S; Lu F.-L; Tsou Y.-J; Ye H.-Y; Lin S.-Y; Huang W.-H; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:04:00Z	Record Low Contact Resistivity to Ge:B (8.110-10Omega-cm-2) and GeSn:B (4.110-10Omega-cm-2) with Optimized [B] and [Sn] by In-situ CVD Doping	Lu F.-L;Liu Y.-C;Tsai C.-E;Ye H.-Y;Liu C.W.; Lu F.-L; Liu Y.-C; Tsai C.-E; Ye H.-Y; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:04:00Z	Record Low Contact Resistivity to Ge:B (8.110-10Omega-cm-2) and GeSn:B (4.110-10Omega-cm-2) with Optimized [B] and [Sn] by In-situ CVD Doping	Lu F.-L;Liu Y.-C;Tsai C.-E;Ye H.-Y;Liu C.W.; Lu F.-L; Liu Y.-C; Tsai C.-E; Ye H.-Y; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:04:00Z	Self-Heating Induced Interchannel Vt Difference of Vertically Stacked Si Nanosheet Gate-All-Around MOSFETs	Chung C.-C;Ye H.-Y;Lin H.H;Wan W.K;Yang M.-T;Liu C.W.; Chung C.-C; Ye H.-Y; Lin H.H; Wan W.K; Yang M.-T; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:04:00Z	Self-Heating Induced Interchannel Vt Difference of Vertically Stacked Si Nanosheet Gate-All-Around MOSFETs	Chung C.-C;Ye H.-Y;Lin H.H;Wan W.K;Yang M.-T;Liu C.W.; Chung C.-C; Ye H.-Y; Lin H.H; Wan W.K; Yang M.-T; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:59Z	Record high mobility (428cm2/V-s) of CVD-grown Ge/strained Ge0.91Sn0.09/Ge quantum well p-MOSFETs	Huang Y.-S;Huang C.-H;Lu F.-L;Lin C.-Y;Ye H.-Y;Wong I.-H;Jan S.-R;Lan H.-S;Liu C.W;Huang Y.-C;Chung H;Chang C.-P;Chu S.S;Kuppurao S.; Huang Y.-S; CHEE-WEE LIU et al.
臺大學術典藏	2021-09-02T00:03:58Z	Novel vertically stacked Ge0.85Si0.15 nGAAFETs above a Si channel with low SS of 76 mV/dec by underneath Si channel and enhanced I on (1.7X at V OV = V DS = 0.5 V) by Ge0.85Si0.15 channels	Liu Y.-C;Huang Y.-S;Lu F.-L;Ye H.-Y;Tu C.-T;Liu C.W.; Liu Y.-C; Huang Y.-S; Lu F.-L; Ye H.-Y; Tu C.-T; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:58Z	Novel vertically stacked Ge0.85Si0.15 nGAAFETs above a Si channel with low SS of 76 mV/dec by underneath Si channel and enhanced I on (1.7X at V OV = V DS = 0.5 V) by Ge0.85Si0.15 channels	Liu Y.-C;Huang Y.-S;Lu F.-L;Ye H.-Y;Tu C.-T;Liu C.W.; Liu Y.-C; Huang Y.-S; Lu F.-L; Ye H.-Y; Tu C.-T; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:57Z	Mobility Calculation of Ge Nanowire Junctionless and Inversion-Mode Nanowire NFETs With Size and Shape Dependence	Ye H.-Y;Chung C.-C;Liu C.W.; Ye H.-Y; Chung C.-C; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:57Z	Mobility Calculation of Ge Nanowire Junctionless and Inversion-Mode Nanowire NFETs With Size and Shape Dependence	Ye H.-Y;Chung C.-C;Liu C.W.; Ye H.-Y; Chung C.-C; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:57Z	Mobility calculation of Ge nanowire junctionless NFETs with size and geometry dependence	Ye H.-Y;Chung C.-C;Wong I.-H;Lan H.-S;Liu C.W.; Ye H.-Y; Chung C.-C; Wong I.-H; Lan H.-S; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:57Z	Mobility calculation of Ge nanowire junctionless NFETs with size and geometry dependence	Ye H.-Y;Chung C.-C;Wong I.-H;Lan H.-S;Liu C.W.; Ye H.-Y; Chung C.-C; Wong I.-H; Lan H.-S; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:54Z	First Stacked Ge0.88Sn0.12 pGAAFETs with Cap, LG=4Onm, Compressive Strain of 3.3%, and High S/D Doping by CVD Epitaxy Featuring Record ION of 58μA at VOV=VDS= -0.5V, Record Gm,max of 172μS at VDS= -0.5V, and Low Noise	Huang Y.-S;Tsai C.-E;Tu C.-T;Ye H.-Y;Liu Y.-C;Lu F.-L;Liu C.W.; Huang Y.-S; Tsai C.-E; Tu C.-T; Ye H.-Y; Liu Y.-C; Lu F.-L; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:54Z	First Stacked Ge0.88Sn0.12 pGAAFETs with Cap, LG=4Onm, Compressive Strain of 3.3%, and High S/D Doping by CVD Epitaxy Featuring Record ION of 58μA at VOV=VDS= -0.5V, Record Gm,max of 172μS at VDS= -0.5V, and Low Noise	Huang Y.-S;Tsai C.-E;Tu C.-T;Ye H.-Y;Liu Y.-C;Lu F.-L;Liu C.W.; Huang Y.-S; Tsai C.-E; Tu C.-T; Ye H.-Y; Liu Y.-C; Lu F.-L; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:53Z	First Demonstration of 4-Stacked Ge0.915Sn0.085 Wide Nanosheets by Highly Selective Isotropic Dry Etching with High S/D Doping and Undoned Channels	Huang Y.-S;Lu F.-L;Tu C.-T;Chen J.-Y;Tsai C.-E;Ye H.-Y;Liu Y.-C;Liu C.; Huang Y.-S; Lu F.-L; Tu C.-T; Chen J.-Y; Tsai C.-E; Ye H.-Y; Liu Y.-C; Liu C.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:53Z	First Demonstration of 4-Stacked Ge0.915Sn0.085 Wide Nanosheets by Highly Selective Isotropic Dry Etching with High S/D Doping and Undoned Channels	Huang Y.-S;Lu F.-L;Tu C.-T;Chen J.-Y;Tsai C.-E;Ye H.-Y;Liu Y.-C;Liu C.; Huang Y.-S; Lu F.-L; Tu C.-T; Chen J.-Y; Tsai C.-E; Ye H.-Y; Liu Y.-C; Liu C.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:53Z	First demonstration of uniform 4-Stacked Ge0.9Sn0.1nanosheets with record ION =73μA at VOV=VDS= -0.5V and low noise using double Ge0.95Sn0.05caps, dry etch, low channel doping, and high S/D doping	Huang Y.-S;Tsai C.-E;Tu C.-T;Chen J.-Y;Ye H.-Y;Lu F.-L;Liu C.W.; Huang Y.-S; Tsai C.-E; Tu C.-T; Chen J.-Y; Ye H.-Y; Lu F.-L; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:53Z	First demonstration of uniform 4-Stacked Ge0.9Sn0.1nanosheets with record ION =73μA at VOV=VDS= -0.5V and low noise using double Ge0.95Sn0.05caps, dry etch, low channel doping, and high S/D doping	Huang Y.-S;Tsai C.-E;Tu C.-T;Chen J.-Y;Ye H.-Y;Lu F.-L;Liu C.W.; Huang Y.-S; Tsai C.-E; Tu C.-T; Chen J.-Y; Ye H.-Y; Lu F.-L; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:51Z	Different Infrared Responses from the Stacked Channels and Parasitic Channel of Stacked GeSn Channel Transistors	Liu H.-H;Huang Y.-S;Lu F.-L;Ye H.-Y;Liu C.W.; Liu H.-H; Huang Y.-S; Lu F.-L; Ye H.-Y; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:51Z	Different Infrared Responses from the Stacked Channels and Parasitic Channel of Stacked GeSn Channel Transistors	Liu H.-H;Huang Y.-S;Lu F.-L;Ye H.-Y;Liu C.W.; Liu H.-H; Huang Y.-S; Lu F.-L; Ye H.-Y; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:50Z	Biaxial strain effects on photoluminescence of Ge/strained GeSn/Ge quantum well	Lin C.-Y;Ye H.-Y;Lu F.-L;Lan H.S;Liu C.W.; Lin C.-Y; Ye H.-Y; Lu F.-L; Lan H.S; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:50Z	Biaxial strain effects on photoluminescence of Ge/strained GeSn/Ge quantum well	Lin C.-Y;Ye H.-Y;Lu F.-L;Lan H.S;Liu C.W.; Lin C.-Y; Ye H.-Y; Lu F.-L; Lan H.S; Liu C.W.; CHEE-WEE LIU

Showing items 1-25 of 25 (1 Page(s) Totally)
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