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Showing items 11-20 of 25 (3 Page(s) Totally)
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| 臺大學術典藏 |
2021-09-02T00:03:58Z |
Novel vertically stacked Ge0.85Si0.15 nGAAFETs above a Si channel with low SS of 76 mV/dec by underneath Si channel and enhanced I on (1.7X at V OV = V DS = 0.5 V) by Ge0.85Si0.15 channels
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Liu Y.-C;Huang Y.-S;Lu F.-L;Ye H.-Y;Tu C.-T;Liu C.W.; Liu Y.-C; Huang Y.-S; Lu F.-L; Ye H.-Y; Tu C.-T; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:57Z |
Mobility Calculation of Ge Nanowire Junctionless and Inversion-Mode Nanowire NFETs With Size and Shape Dependence
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Ye H.-Y;Chung C.-C;Liu C.W.; Ye H.-Y; Chung C.-C; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:57Z |
Mobility Calculation of Ge Nanowire Junctionless and Inversion-Mode Nanowire NFETs With Size and Shape Dependence
|
Ye H.-Y;Chung C.-C;Liu C.W.; Ye H.-Y; Chung C.-C; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:57Z |
Mobility calculation of Ge nanowire junctionless NFETs with size and geometry dependence
|
Ye H.-Y;Chung C.-C;Wong I.-H;Lan H.-S;Liu C.W.; Ye H.-Y; Chung C.-C; Wong I.-H; Lan H.-S; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:57Z |
Mobility calculation of Ge nanowire junctionless NFETs with size and geometry dependence
|
Ye H.-Y;Chung C.-C;Wong I.-H;Lan H.-S;Liu C.W.; Ye H.-Y; Chung C.-C; Wong I.-H; Lan H.-S; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:54Z |
First Stacked Ge0.88Sn0.12 pGAAFETs with Cap, LG=4Onm, Compressive Strain of 3.3%, and High S/D Doping by CVD Epitaxy Featuring Record ION of 58μA at VOV=VDS= -0.5V, Record Gm,max of 172μS at VDS= -0.5V, and Low Noise
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Huang Y.-S;Tsai C.-E;Tu C.-T;Ye H.-Y;Liu Y.-C;Lu F.-L;Liu C.W.; Huang Y.-S; Tsai C.-E; Tu C.-T; Ye H.-Y; Liu Y.-C; Lu F.-L; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:54Z |
First Stacked Ge0.88Sn0.12 pGAAFETs with Cap, LG=4Onm, Compressive Strain of 3.3%, and High S/D Doping by CVD Epitaxy Featuring Record ION of 58μA at VOV=VDS= -0.5V, Record Gm,max of 172μS at VDS= -0.5V, and Low Noise
|
Huang Y.-S;Tsai C.-E;Tu C.-T;Ye H.-Y;Liu Y.-C;Lu F.-L;Liu C.W.; Huang Y.-S; Tsai C.-E; Tu C.-T; Ye H.-Y; Liu Y.-C; Lu F.-L; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:53Z |
First Demonstration of 4-Stacked Ge0.915Sn0.085 Wide Nanosheets by Highly Selective Isotropic Dry Etching with High S/D Doping and Undoned Channels
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Huang Y.-S;Lu F.-L;Tu C.-T;Chen J.-Y;Tsai C.-E;Ye H.-Y;Liu Y.-C;Liu C.; Huang Y.-S; Lu F.-L; Tu C.-T; Chen J.-Y; Tsai C.-E; Ye H.-Y; Liu Y.-C; Liu C.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:53Z |
First Demonstration of 4-Stacked Ge0.915Sn0.085 Wide Nanosheets by Highly Selective Isotropic Dry Etching with High S/D Doping and Undoned Channels
|
Huang Y.-S;Lu F.-L;Tu C.-T;Chen J.-Y;Tsai C.-E;Ye H.-Y;Liu Y.-C;Liu C.; Huang Y.-S; Lu F.-L; Tu C.-T; Chen J.-Y; Tsai C.-E; Ye H.-Y; Liu Y.-C; Liu C.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:53Z |
First demonstration of uniform 4-Stacked Ge0.9Sn0.1nanosheets with record ION =73μA at VOV=VDS= -0.5V and low noise using double Ge0.95Sn0.05caps, dry etch, low channel doping, and high S/D doping
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Huang Y.-S;Tsai C.-E;Tu C.-T;Chen J.-Y;Ye H.-Y;Lu F.-L;Liu C.W.; Huang Y.-S; Tsai C.-E; Tu C.-T; Chen J.-Y; Ye H.-Y; Lu F.-L; Liu C.W.; CHEE-WEE LIU |
Showing items 11-20 of 25 (3 Page(s) Totally)
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View [10|25|50] records per page
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