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Showing items 21-25 of 25  (1 Page(s) Totally)
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Institution Date Title Author
臺大學術典藏 2021-09-02T00:03:53Z First demonstration of uniform 4-Stacked Ge0.9Sn0.1nanosheets with record ION =73μA at VOV=VDS= -0.5V and low noise using double Ge0.95Sn0.05caps, dry etch, low channel doping, and high S/D doping Huang Y.-S;Tsai C.-E;Tu C.-T;Chen J.-Y;Ye H.-Y;Lu F.-L;Liu C.W.; Huang Y.-S; Tsai C.-E; Tu C.-T; Chen J.-Y; Ye H.-Y; Lu F.-L; Liu C.W.; CHEE-WEE LIU
臺大學術典藏 2021-09-02T00:03:51Z Different Infrared Responses from the Stacked Channels and Parasitic Channel of Stacked GeSn Channel Transistors Liu H.-H;Huang Y.-S;Lu F.-L;Ye H.-Y;Liu C.W.; Liu H.-H; Huang Y.-S; Lu F.-L; Ye H.-Y; Liu C.W.; CHEE-WEE LIU
臺大學術典藏 2021-09-02T00:03:51Z Different Infrared Responses from the Stacked Channels and Parasitic Channel of Stacked GeSn Channel Transistors Liu H.-H;Huang Y.-S;Lu F.-L;Ye H.-Y;Liu C.W.; Liu H.-H; Huang Y.-S; Lu F.-L; Ye H.-Y; Liu C.W.; CHEE-WEE LIU
臺大學術典藏 2021-09-02T00:03:50Z Biaxial strain effects on photoluminescence of Ge/strained GeSn/Ge quantum well Lin C.-Y;Ye H.-Y;Lu F.-L;Lan H.S;Liu C.W.; Lin C.-Y; Ye H.-Y; Lu F.-L; Lan H.S; Liu C.W.; CHEE-WEE LIU
臺大學術典藏 2021-09-02T00:03:50Z Biaxial strain effects on photoluminescence of Ge/strained GeSn/Ge quantum well Lin C.-Y;Ye H.-Y;Lu F.-L;Lan H.S;Liu C.W.; Lin C.-Y; Ye H.-Y; Lu F.-L; Lan H.S; Liu C.W.; CHEE-WEE LIU

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