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Institution Date Title Author
東海大學 2007 Temperature effect of metal-oxide-semiconductor field-effect-transistors' gate current evaluated with the mask dimensions Yeh, C.-C., Neih, C.-F., Chen, Y.-Y., Gong, J.
東海大學 2007 Simple and accurate method of modeling gate current of N-channel metal-oxide-semiconductor field-effect transistor Yeh, C.-C., Neih, C.-F., Chen, Y.-Y., Gong, J.
東海大學 2006-10-23 Modeling the MOSFETs' gate current with the drawn dimensions Yeh, C.-C., Neih, C.-F., Chen, Y.-Y., Gong, J.

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