| 國立交通大學 |
2014-12-08T15:04:47Z |
THE EFFECT OF TEMPERATURE ON I-V-CHARACTERISTICS OF A-SI-H PHOTODIODE
|
CHANG, KL; YEH, CF |
| 國立交通大學 |
2014-12-08T15:04:31Z |
THE CHARACTERIZATION OF AL2O3 PREPARED BY ANODIC-OXIDATION
|
YEH, CF; CHENG, JY; LU, JH |
| 國立交通大學 |
2014-12-08T15:04:25Z |
NOVEL TECHNIQUE FOR SIO2 FORMED BY LIQUID-PHASE DEPOSITION FOR LOW-TEMPERATURE PROCESSED POLYSILICON TFT
|
YEH, CF; LIN, SS; CHEN, CL; YANG, YC |
| 國立交通大學 |
2014-12-08T15:04:20Z |
EXPERIMENTAL COMPARISON OF OFF-STATE CURRENT BETWEEN HIGH-TEMPERATURE-PROCESSED AND LOW-TEMPERATURE-PROCESSED UNDOPED CHANNEL POLYSILICON THIN-FILM TRANSISTORS
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YEH, CF; YANG, TZ; CHEN, CL; CHEN, TJ; YANG, YC |
| 國立交通大學 |
2014-12-08T15:04:20Z |
INVESTIGATION OF SI-SIO2 INTERFACE PROPERTIES FOR BONDED SILICON-ON-INSULATOR
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YEH, CF; KAO, HW; CHANG, BS; CHANG, KL |
| 國立交通大學 |
2014-12-08T15:04:13Z |
IMPROVED IV-CHARACTERISTICS OF POLYSILICON THIN-FILM TRANSISTORS WITH NOVEL DUAL-BUFFER DRAIN STRUCTURE
|
YEH, CF; CHERN, CH |
| 國立交通大學 |
2014-12-08T15:04:07Z |
PERFORMANCE AND OFF-STATE CURRENT MECHANISMS OF LOW-TEMPERATURE PROCESSED POLYSILICON THIN-FILM TRANSISTORS WITH LIQUID-PHASE DEPOSITED SIO2 GATE INSULATOR
|
YEH, CF; LIN, SS; YANG, TZ; CHEN, CL; YANG, YC |
| 國立交通大學 |
2014-12-08T15:04:04Z |
LOW-TEMPERATURE-PROCESSED POLY-SI THIN-FILM TRANSISTORS USING SOLID-PHASE-CRYSTALLIZED AND LIQUID-PHASE-DEPOSITED GATE OXIDE
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YEH, CF; CHEN, CL; YANG, YC; LIN, SS; YANG, TZ; HONG, TY |
| 國立交通大學 |
2014-12-08T15:03:56Z |
ROOM-TEMPERATURE SELECTIVE GROWTH OF DIELECTRIC FILMS BY LIQUID-PHASE DEPOSITION
|
YEH, CF; CHEN, CL |
| 國立交通大學 |
2014-12-08T15:03:43Z |
THE PHYSICOCHEMICAL PROPERTIES AND GROWTH-MECHANISM OF OXIDE (SIO2-XFX) BY LIQUID-PHASE DEPOSITION WITH H2O ADDITION ONLY
|
YEH, CF; CHEN, CL; LIN, GH |
| 國立交通大學 |
2014-12-08T15:03:33Z |
CHARACTERISTICS OF SELF-INDUCED LIGHTLY-DOPED-DRAIN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS WITH LIQUID-PHASE DEPOSITION SIO2 AS GATE-INSULATOR AND PASSIVATION-LAYER
|
YEH, CF; YANG, TZ; CHEN, TJ |
| 國立交通大學 |
2014-12-08T15:03:31Z |
BOND-STRUCTURE CHANGES OF LIQUID-PHASE DEPOSITED OXIDE (SIO2-XFX) ON N2 ANNEALING
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YEH, CF; CHEN, CL; LUR, W; YEN, PW |
| 國立交通大學 |
2014-12-08T15:03:22Z |
FABRICATION OF MOSFETS USING LOW-TEMPERATURE LIQUID-PHASE DEPOSITED OXIDE
|
YEH, CF; LIN, SS; HONG, TY |
| 國立交通大學 |
2014-12-08T15:03:17Z |
LOW-TEMPERATURE PROCESSED MOSFETS WITH LIQUID-PHASE DEPOSITED SIO2-XFX AS GATE INSULATOR
|
YEH, CF; LIN, SS; HONG, TY |
| 國立交通大學 |
2014-12-08T15:03:16Z |
EFFECTS OF PLASMA TREATMENT ON THE PROPERTIES OF ROOM-TEMPERATURE LIQUID-PHASE DEPOSITED (LPD) OXIDE-FILMS
|
YEH, CF; LIN, SS |
| 國立交通大學 |
2014-12-08T15:03:11Z |
CHARACTERIZATION OF THE CHEMICAL-MECHANICAL POLISHING PROCESS-BASED ON NANOINDENTATION MEASUREMENT OF DIELECTRIC FILMS
|
LIU, CW; DAI, BT; YEH, CF |
| 國立交通大學 |
2014-12-08T15:03:10Z |
CONTROLLING FLUORINE CONCENTRATION AND THERMAL ANNEALING EFFECT ON LIQUID-PHASE DEPOSITED SIO2-XFX FILMS
|
YEH, CF; CHEN, CL |
| 國立交通大學 |
2014-12-08T15:03:07Z |
THINNER LIQUID-PHASE DEPOSITED OXIDE FOR POLYSILICON THIN-FILM TRANSISTORS
|
YEH, CF; LIN, SS; FAN, CL |
| 國立交通大學 |
2014-12-08T15:03:02Z |
Chemical mechanical polishing of PSG and BPSG dielectric films: The effect of phosphorus and boron concentration
|
Liu, CW; Dai, BT; Yeh, CF |
| 國立交通大學 |
2014-12-08T15:02:52Z |
Modeling of the wear mechanism during chemical-mechanical polishing
|
Liu, CW; Dai, BT; Tseng, WT; Yeh, CF |
| 國立交通大學 |
2014-12-08T15:02:50Z |
Post cleaning of chemical mechanical polishing process
|
Liu, CW; Dai, BT; Yeh, CF |
| 國立交通大學 |
2014-12-08T15:02:29Z |
Stress in liquid-phase deposited oxide films
|
Yeh, CF; Lin, SS; Lur, WT |
| 國立交通大學 |
2014-12-08T15:02:11Z |
Effects of mechanical characteristics on the chemical-mechanical polishing of dielectric thin films
|
Tseng, WT; Liu, CW; Dai, BT; Yeh, CF |
| 國立交通大學 |
2014-12-08T15:01:54Z |
Physical characteristics of N-2 annealing on room-temperature-deposited ion plating oxide
|
Yeh, CF; Chen, TJ; Kao, JS |
| 國立交通大學 |
2014-12-08T15:01:26Z |
Effects of process temperature on polysilicon thin film transistors with liquid-phase deposited oxides as gate insulators
|
Yeh, CF; Chen, TJ; Jeng, JN |
