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Showing items 31-40 of 44  (5 Page(s) Totally)
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Institution Date Title Author
國立交通大學 2014-12-08T15:11:24Z Comparison of MONOS memory device integrity when using Hf(1-x-y)N(x)O(y) trapping layers with different N compositions Yang, H. J.; Cheng, C. F.; Chen, W. B.; Lin, S. H.; Yeh, F. S.; McAlister, Sean P.; Chin, Albert
國立交通大學 2014-12-08T15:11:13Z Improving the retention and endurance characteristics of charge-trapping memory by using double quantum barriers Lin, S. H.; Yang, H. J.; Chen, W. B.; Yeh, F. S.; McAlister, Sean P.; Chin, Albert
國立交通大學 2014-12-08T15:11:06Z High density and low leakage current in TiO(2) MIM capacitors processed at 300 degrees C Cheng, C. H.; Lin, S. H.; Jhou, K. Y.; Chen, W. J.; Chou, C. P.; Yeh, F. S.; Hu, J.; Hwang, M.; Arikado, T.; McAlister, S. P.
國立交通大學 2014-12-08T15:10:16Z Low-V(t) TaN/HfLaO n-MOSFETs Using Low-Temperature Formed Source-Drain Junctions Lin, S. H.; Liu, S. L.; Yeh, F. S.; Chin, Albert
國立交通大學 2014-12-08T15:09:23Z Low-Threshold-Voltage TaN/Ir/LaTiO p-MOSFETs Incorporating Low-Temperature-Formed Shallow Junctions Lin, S. H.; Cheng, C. H.; Chen, W. B.; Yeh, F. S.; Chin, Albert
國立交通大學 2014-12-08T15:09:13Z High-Density and Low-Leakage-Current MIM Capacitor Using Stacked TiO(2)/ZrO(2) Insulators Lin, S. H.; Chiang, K. C.; Chin, Albert; Yeh, F. S.
國立交通大學 2014-12-08T15:08:49Z Low-Threshold-Voltage TaN/LaTiO n-MOSFETs With Small EOT Lin, S. H.; Cheng, C. H.; Chen, W. B.; Yeh, F. S.; Chin, Albert
國立交通大學 2014-12-08T15:08:08Z Improved Stress Reliability of Analog Metal-Insulator-Metal Capacitors Using TiO(2)/ZrO(2) Dielectrics Lin, S. H.; Chiang, K. C.; Yeh, F. S.; Chin, Albert
國立交通大學 2014-12-08T15:07:53Z High-kappa TiCeO MIM Capacitors with a Dual-Plasma Interface Treatment Cheng, C. H.; Hsu, H. H.; Hsieh, I. J.; Deng, C. K.; Chin, Albert; Yeh, F. S.
國立交通大學 2014-12-08T15:07:53Z A Study on Frequency-Dependent Voltage Nonlinearity of SrTiO(3) rf Capacitor Cheng, C. H.; Huang, C. C.; Hsu, H. H.; Chen, P. C.; Chiang, K. C.; Chin, Albert; Yeh, F. S.

Showing items 31-40 of 44  (5 Page(s) Totally)
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