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Showing items 11-20 of 44 (5 Page(s) Totally)
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| 國立交通大學 |
2019-04-02T05:57:53Z |
Lanthanide-Oxides Mixed TiO2 Dielectrics for High-kappa MIM Capacitors
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Cheng, C. H.; Deng, C. K.; Hsu, H. H.; Chen, P. C.; Liou, B. H.; Chin, Albert; Yeh, F. S. |
| 臺大學術典藏 |
2018-09-10T08:14:17Z |
Metal-gate/high-κ CMOS scaling from Si to Ge at small EOT
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Chen, W.B.; Shie, B.S.; Hsu, K.C.; Chen, P.C.; Cheng, C.H.; Chi, C.C.; Wu, Y.H.; Chaing-Liaoc, K.S.; Wang, S.J.; Kuan, C.H.; Yeh, F.S.; Chin, A.; CHIEH-HSIUNG KUANet al. |
| 國立交通大學 |
2018-08-21T05:57:01Z |
The Mechanisms of on/off currents for the Dual-Gate a-Si : H thin film transistors with various length sizes of indium-tin-oxide top gate
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Liang, Chung-Yu; Chang, T. C.; Po-Tsun, Liu; Gan, Feng-Yuan; Yeh, F. S. |
| 國立交通大學 |
2017-04-21T06:49:54Z |
Very High Performance Non-Volatile Memory on Flexible Plastic Substrate
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Cheng, C. H.; Chou, K. Y.; Chin, Albert; Yeh, F. S. |
| 國立交通大學 |
2017-04-21T06:49:53Z |
High Performance Ultra-Low Energy RRAM with Good Retention and Endurance
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Cheng, C. H.; Tsai, C. Y.; Chin, Albert; Yeh, F. S. |
| 國立交通大學 |
2017-04-21T06:49:53Z |
Novel Ultra-Low Power RRAM with Good Endurance and Retention
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Cheng, C. H.; Chin, Albert; Yeh, F. S. |
| 國立交通大學 |
2017-04-21T06:48:52Z |
Good 150 degrees C Retention and Fast Erase Characteristics in Charge-Trap-Engineered Memory having a Scaled Si3N4 Layer
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Lin, S. H.; Chin, Albert; Yeh, F. S.; McAlister, S. P. |
| 國立交通大學 |
2014-12-08T15:48:24Z |
Ultralow-Power Ni/GeO/STO/TaN Resistive Switching Memory
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Cheng, C. H.; Chin, Albert; Yeh, F. S. |
| 國立交通大學 |
2014-12-08T15:40:20Z |
Flat band voltage control on low V(t) metal-gate/high-kappa CMOSFETs with small EOT
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Chin, Albert; Chang, M. F.; Lin, S. H.; Chen, W. B.; Lee, P. T.; Yeh, F. S.; Liao, C. C.; Li, M. -F.; Su, N. C.; Wang, S. J. |
| 國立交通大學 |
2014-12-08T15:39:20Z |
Highly-Scaled 3.6-nm ENT Trapping Layer MONOS Device with Good Retention and Endurance
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Tsai, C. Y.; Lee, T. H.; Chin, Albert; Wang, Hong; Cheng, C. H.; Yeh, F. S. |
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